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SUM110N06-3M4L Datasheet(PDF) 1 Page - Vishay Siliconix

Part No. SUM110N06-3M4L
Description  N-Channel 60-V (D-S) 175C MOSFET
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
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SUM110N06-3M4L Datasheet(HTML) 1 Page - Vishay Siliconix

   
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SPICE Device Model SUM110N06-3m4L
Vishay Siliconix
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate
data sheet of the same number for guaranteed specification limits.
Document Number: 73060
www.vishay.com
02-Jul-04
1
N-Channel 60-V (D-S) 175
°C MOSFET
CHARACTERISTICS
• N-Channel Vertical DMOS
• Macro Model (Subcircuit Model)
• Level 3 MOS
• Apply for both Linear and Switching Application
• Accurate over the −55 to 125°C Temperature Range
• Model the Gate Charge, Transient, and Diode Reverse Recovery
Characteristics
DESCRIPTION
The attached spice model describes the typical electrical
characteristics of the n-channel vertical DMOS.
The subcircuit
model is extracted and optimized over the
−55 to 125°C
temperature ranges under the pulsed 0 to 10V gate drive. The
saturated output impedance is best fit at the gate bias near the
threshold voltage.
A novel gate-to-drain feedback capacitance network is used to
model the gate charge characteristics while avoiding convergence
difficulties of the switched Cgd model. All model parameter values
are optimized to provide a best fit to the measured electrical data
and are not intended as an exact physical interpretation of the
device.
SUBCIRCUIT MODEL SCHEMATIC


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