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RA07N3340M Datasheet(PDF) 3 Page - Mitsubishi Electric Semiconductor

Part # RA07N3340M
Description  330-400MHz 7.5W 9.6V 2 Stage Amp. For PORTABLE RADIO
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

RA07N3340M Datasheet(HTML) 3 Page - Mitsubishi Electric Semiconductor

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MITSUBISHI RF POWER MODULE
RA07N3340M
RA07N3340M
MITSUBISHI ELECTRIC
5 April 2004
3/9
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
OUTPUT POWER, TOTAL EFFICIENCY,
2nd, 3
rd HARMONICS versus FREQUENCY
and INPUT VSWR versus FREQUENCY
OUTPUT POWER, POWER GAIN and
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
DRAIN CURRENT versus INPUT POWER
0
2
4
6
8
10
12
14
320 330 340 350 360 370 380 390 400 410
FREQUENCY f(MHz)
0
20
40
60
80
100
120
140
VDD=9.6V
Pin=20mW
Pout @VGG=3.5V
η
T @Pout=7W
ρ
in @Pout=7W
0
10
20
30
40
50
-15
-10
-5
0
5
10
15
20
INPUT POWER Pin(dBm)
0
1
2
3
4
5
f=330MHz,
VDD=9.6V,
VGG=3.5V
Pout
IDD
Gp
0
10
20
30
40
50
-15
-10
-5
0
5
10
15
20
INPUT POWER Pin(dBm)
0
1
2
3
4
5
f=360MHz,
VDD=9.6V,
VGG=3.5V
Pout
Gp
IDD
-70
-60
-50
-40
-30
-20
320 330 340 350 360 370 380 390 400 410
FREQUENCY f(MHz)
VDD=9.6V
Pin=20mW
2
nd @P
out=7W
3
rd
@Pout=7W
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
OUTPUT POWER and DRAIN CURRENT
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
versus DRAIN VOLTAGE
0
5
10
15
20
25
2
4
6
8
10
12
DRAIN VOLTAGE VDD(V)
0
1
2
3
4
5
Pout
f=330MHz,
VGG=3.5V,
Pin=20mW
IDD
0
10
20
30
40
50
-15
-10
-5
0
5
10
15
20
INPUT POWER Pin(dBm)
0
1
2
3
4
5
f=400MHz,
VDD=9.6V,
VGG=3.5V
Pout
Gp
IDD
0
5
10
15
20
25
2
4
6
8
10
12
DRAIN VOLTAGE VDD(V)
0
1
2
3
4
5
Pout
f=360MHz,
VGG=3.5V,
Pin=20mW
IDD
TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50
Ω, unless otherwise specified)


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