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IS41LV4100 Datasheet(PDF) 7 Page - Integrated Silicon Solution, Inc |
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IS41LV4100 Datasheet(HTML) 7 Page - Integrated Silicon Solution, Inc |
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7 / 19 page  IS41C4100 IS41LV4100 ISSI® Integrated Silicon Solution, Inc. — 1-800-379-4774 7 PRELIMINARY INFORMATION Rev. 00A 09/10/01 AC CHARACTERISTICS(1,2,3,4,5,6) (Recommended Operating Conditions unless otherwise noted.) -35 -60 Symbol Parameter Min. Max. Min. Max. Units tRC Random READ or WRITE Cycle Time 60 — 110 — ns tRAC Access Time from RAS(6, 7) 35 — 60 — ns tCAC Access Time from CAS(6, 8, 15) — 10 — 15 ns tAA Access Time from Column-Address(6) — 18 — 30 ns tRAS RAS Pulse Width 35 10K 60 10K ns tRP RAS Precharge Time 20 — 40 — ns tCAS CAS Pulse Width(26) 6 10K 10 10K ns tCP CAS Precharge Time(9, 25) 5 — 10 — ns tCSH CAS Hold Time (21) 35 — 60 — ns tRCD RAS to CAS Delay Time(10, 20) 11 28 20 45 ns tASR Row-Address Setup Time 0 — 0 — ns tRAH Row-Address Hold Time 6 — 10 — ns tASC Column-Address Setup Time(20) 0 — 0 — ns tCAH Column-Address Hold Time(20) 6 — 10 — ns tAR Column-Address Hold Time 30 — 40 — ns (referenced to RAS) tRAD RAS to Column-Address Delay Time(11) 10 20 15 30 ns tRAL Column-Address to RAS Lead Time 18 — 30 — ns tRPC RAS to CAS Precharge Time 0 — 0 — ns tRSH RAS Hold Time(27) 8 — 115 — ns tCLZ CAS to Output in Low-Z(15, 29) 3 — 3 — ns tCRP CAS to RAS Precharge Time(21) 5 — 5 — ns tOD Output Disable Time(19, 28, 29) 312 3 12 ns tOE / tOEA Output Enable Time(15, 16) 010 — 15 ns tOEHC OE HIGH Hold Time from CAS HIGH 10 — 10 — ns tOEP OE HIGH Pulse Width 10 — 10 — ns tOES OE LOW to CAS HIGH Setup Time 5 — 5 — ns tRCS Read Command Setup Time(17, 20) 0 — 0 — ns tRRH Read Command Hold Time 0 — 0 — ns (referenced to RAS)(12) tRCH Read Command Hold Time 0 — 0 — ns (referenced to CAS)(12, 17, 21) tWCH Write Command Hold Time(17, 27) 5 — 10 — ns tWCR Write Command Hold Time 30 — 50 — ns (referenced to RAS)(17) |
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