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C106 Datasheet(PDF) 4 Page - ON Semiconductor

Part No. C106
Description  Sensitive Gate Silicon Controlled Rectifiers
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

C106 Datasheet(HTML) 4 Page - ON Semiconductor

  C106 Datasheet HTML 1Page - ON Semiconductor C106 Datasheet HTML 2Page - ON Semiconductor C106 Datasheet HTML 3Page - ON Semiconductor C106 Datasheet HTML 4Page - ON Semiconductor C106 Datasheet HTML 5Page - ON Semiconductor C106 Datasheet HTML 6Page - ON Semiconductor  
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C106 Series
http://onsemi.com
4
DC
DC
JUNCTION TEMPERATURE ≈ 110°C
100
10
20
30
40
70
110
90
3.6
80
0
.4
.8
1.6
1.2
2.0
2.4
3.2
60
4.0
IT(AV) AVERAGE ON-STATE CURRENT (AMPERES)
HALF SINE WAVE
RESISTIVE OR INDUCTIVE LOAD.
50 to 400 Hz
50
6
4
2
0
8
0
10
2.8
3.6
.4
.8
1.6
1.2
2.0
2.4
3.2
4.0
2.6
IT(AV) AVERAGE ON-STATE CURRENT (AMPERES)
HALF SINE WAVE
RESISTIVE OR INDUCTIVE LOAD
50 TO 400Hz.
Figure 1. Average Current Derating
Figure 2. Maximum On−State Power Dissipation
1
100
95
−40 −25 −10
20
535
50
80
10
110
TJ, JUNCTION TEMPERATURE (°C)
65
Figure 3. Typical Gate Trigger Current versus
Junction Temperature
Figure 4. Typical Holding Current versus
Junction Temperature
0.9
0.2
0.3
0.4
0.7
1.0
0.8
95
−45 −25 −10
20
535
50
80
0.6
110
TJ, JUNCTION TEMPERATURE (°C)
0.5
65
Figure 5. Typical Gate Trigger Voltage versus
Junction Temperature
Figure 6. Typical Latching Current versus
Junction Temperature
10
1000
95
−40 −25 −10
20
535
50
80
100
110
TJ, JUNCTION TEMPERATURE (°C)
65
10
1000
95
−40 −25 −10
20
535
50
80
100
110
TJ, JUNCTION TEMPERATURE (°C)
65


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