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KMM372F410CS Datasheet(PDF) 3 Page - Samsung semiconductor

Part No. KMM372F410CS
Description  4M x 72 DRAM DIMM with ECC using 4Mx4, 4K 2K Refresh, 3.3V
Download  20 Pages
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Maker  SAMSUNG [Samsung semiconductor]
Homepage  http://www.samsung.com/Products/Semiconductor
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KMM372F410CS Datasheet(HTML) 3 Page - Samsung semiconductor

 
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DRAM MODULE
KMM372F410CK/CS
KMM372F400CK/CS
ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open.
ICC is specified as an average current. In ICC1 and ICC3, address can be changed maximum once while RAS=VIL. In ICC4,
address can be changed maximum once within one hyper page mode cycle,
tHPC.
* NOTE :
DC AND OPERATING CHARACTERISTICS (Recommended operating conditions unless otherwise noted)
ICC1*
ICC2
ICC3*
ICC4*
ICC5
ICC6*
II(L)
IO(L)
VOH
VOL
Symbol
Speed
KMM372F400CK/CS
KMM372F410CK/CS
Unit
Min
Max
Min
Max
ICC1
-5
-6
-
-
1620
1440
-
-
1980
1800
mA
mA
ICC2
Don
′t care
-
100
-
100
mA
ICC3
-5
-6
-
-
1620
1440
-
-
1980
1800
mA
mA
ICC4
-5
-6
-
-
1440
1260
-
-
1620
1440
mA
mA
ICC5
Don
′t care
-
30
-
30
mA
ICC6
-5
-6
-
-
1620
1440
-
-
1980
1800
mA
mA
II(L)
IO(L)
Don
′t care
-45
-5
45
5
-45
-5
45
5
uA
uA
VOH
VOL
Don
′t care
2.4
-
-
0.4
2.4
-
-
0.4
V
V
: Operating Current * (RAS, CAS, Address cycling @
tRC=min)
: Standby Current (RAS=CAS=W=VIH)
: RAS Only Refresh Current * (CAS=VIH, RAS cycling @
tRC=min)
: EDO Mode Current * (RAS=VIL, CAS cycling :
tHPC=min)
: Standby Current (RAS=CAS=W=Vcc-0.2V)
: CAS-Before-RAS Refresh Current * (RAS and CAS cycling @
tRC=min)
: Input Leakage Current (Any input 0
≤VIN≤Vcc+0.3V, all other pins not under test=0 V)
: Output Leakage Current(Data Out is disabled, 0V
≤VOUT≤Vcc)
: Output High Voltage Level (IOH = -2mA)
: Output Low Voltage Level (IOL = 2mA)
RECOMMENDED OPERATING CONDITIONS (Voltage referenced to VSS, TA = 0 to 70
°C)
*1 : VCC+1.3V/15ns, Pulse width is measured at VCC.
*2 : -1.3V/15ns, Pulse width is measured at VSS.
Item
Symbol
Min
Typ
Max
Unit
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
VCC
VSS
VIH
VIL
3.0
0
2.0
-0.3*2
3.3
0
-
-
3.6
0
VCC+0.3*1
0.8
V
V
V
V
ABSOLUTE MAXIMUM RATINGS *
* Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to
the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for intended
periods may affect device reliability.
Item
Symbol
Rating
Unit
Voltage on any pin relative VSS
Voltage on VCC supply relative to VSS
Storage Temperature
Power Dissipation
Short Circuit Output Current
VIN, VOUT
VCC
Tstg
PD
IOS
-0.5 to +4.6
-0.5 to +4.6
-55 to +125
18
50
V
V
°C
W
mA


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