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IDT71V124 Datasheet(PDF) 2 Page - Integrated Device Technology

Part No. IDT71V124
Description  3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout
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Maker  IDT [Integrated Device Technology]
Homepage  http://www.idt.com
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IDT71V124 Datasheet(HTML) 2 Page - Integrated Device Technology

   
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IDT71V124, 3.3V CMOS Static RAM
1 Meg (128K x 8-Bit), Revolutionary Pinout
Commercial and Industrial Temperature Ranges
PAR
T IN
OBSOLESCENCE
ORDER
71V124SA
FOR
NEW
DESIGNS
Symbol
Parameter
Min.
Typ.
Max.
Unit
VDD
Supply Voltage
3.0
3.3
3.6
V
GND
Ground
0
0
0
V
VIH
Input High Voltage
2.0
____
VDD +0.3
V
VIL
Input Low Voltage
–0.3(1)
____
0.8
V
3484 tbl 04
Pin Configuration
SOJ
Top View
Recommended DC Operating
Conditions
DC Electrical Characteristics
(VDD = 3.3V ± 10%, Commercial and Industrial Temperature Ranges)
Absolute Maximum Ratings(1)
Capacitance
(TA = +25°C, f = 1.0MHz, SOJ package)
Truth Table(1,2)
5
6
7
8
9
10
11
12
A0
A1
A2
1
2
3
4
32
31
30
29
28
27
26
25
24
23
22
21
A15
A3
CS
I/O1
VDD
A14
OE
I/O7
I/O6
GND
I/O5
3484 drw 02
GND
13
20
14
19
15
18
16
A7
17
I/O2
I/O3
WE
A4
A5
A6
A12
A11
A10
A9
A8
SO32-3
I/O0
A16
A13
VDD
I/O4
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliabilty.
2. VTERM must not exceed VDD + 0.5V.
NOTE:
1. This parameter is guaranteed by device characterization, but is not production
tested.
NOTE:
1. VIL (min.) = –1V for pulse width less than 5ns, once per cycle.
NOTES:
1. H = VIH, L = VIL, x = Don't care.
2. VLC = 0.2V, VHC = VDD –0.2V.
3. Other inputs
≥VHC or VLC.
CS
OE
WE
I/O
Function
LL
H
DATAOUT
Read Data
LX
L
DATAIN
Write Data
L
H
H
High-Z
Output Disabled
H
X
X
High-Z
Deselected – Standby (ISB)
VHC(3)
X
X
High-Z
Deselected – Standby (ISB1)
3484 tbl 01
Symbol
Rating
Value
Unit
VTERM(2)
Terminal Voltage with
Respect to GND
–0.5 to +4.1(2)
V
TA
Operating Temperature
0 to +70
oC
TBIAS
Temperature Under Bias
–55 to +125
oC
TSTG
Storage Temperature
–55 to +125
oC
PT
Power Dissipation
0.5
W
IOUT
DC Output Current
50
mA
3484 tbl 02
Symbol
Parameter(1)
Conditions
Max.
Unit
CIN
Input Capacitance
VIN = 3dV
8
pF
CI/O
I/O Capacitance
VOUT = 3dV
8
pF
3484 tbl 03
Symbol
Parameter
Test Condition
IDT71V124
Unit
Min.
Max.
|ILI|
Input Leakage Current
VDD = Max., VIN = GND to VDD
___
5µ A
|ILO|
Output Leakage Current
VDD = Max.,
CS = VIH, VOUT = GND to VDD
___
5µ A
VOL
Output Low Voltage
IOL = 8mA, VDD = Min.
___
0.4
V
VOH
Output High Voltage
IOH = –8mA, VDD = Min.
2.4
___
V
3484 tbl 05
Grade
Temperature
GND
VDD
Commercial
0°C to +70°C
0V
See Below
Industrial
–40°C to +85°C
0V
See Below
3484 tbl 02a
RecommendedOperating
Temperature and Supply Voltage


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