HAF2008 datasheet(2/6 Pages) HITACHI

Part #	HAF2008

Description	SILICON N CHANNEL MOSFET SERIES POWER SWITCHING

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Manufacturer	HITACHI [Hitachi Semiconductor]

Direct Link	http://www.renesas.com/eng

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HAF2008

2

Absolute Maximum Ratings (Ta = 25

°C)

Item

Symbol

Ratings

Unit

Drain to source voltage

V

DSS

60

V

Gate to source voltage

V

GSS

(16)

V

Gate to source voltage

V

GSS

(–2.5)

V

Drain current

I

D

20

A

Drain peak current

I

D(pulse)

Note1

40

A

Body-drain diode reverse drain current

I

DR

20

A

Channel dissipation

Pch

Note2

30

W

Channel temperature

Tch

150

°C

Storage temperature

Tstg

–55 to +150

°C

Note:

1. PW

≤ 10µs, duty cycle ≤ 1 %

2. Value at Ta = 25

°C

Typical Operation Characteristics

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Input voltage

V

IH

3.5

—

V

IL

—

1.2

V

Input current

I

IH1

—

100

µA

Vi = 8V, V

DS = 0

(Gate non shut down)

I

IH2

——

50

µA

Vi = 3.5V, V

DS = 0

I

IL

——

1

µA

Vi = 1.2V, V

DS = 0

Input current

I

IH(sd)1

—

0.8

—

mA

Vi = 8V, V

DS = 0

(Gate non shut down)

I

IH(sd)2

—

0.35

—

mA

Vi = 3.5V, V

DS = 0

Shut down temperature

T

sd

—

175

—

°C

Channel temperature

Gate operation voltage

V

op

3.5

—

12

V

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