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ILB03N60 Datasheet(PDF) 2 Page - Infineon Technologies AG |
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ILB03N60 Datasheet(HTML) 2 Page - Infineon Technologies AG |
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2 / 15 page  ILA03N60, ILP03N60 ^ ILB03N60, ILD03N60 Power Semiconductors 2 Rev. 1.2 Apr-04 Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, junction – case RthJC P-TO-220-3-31 Other packages 7.6 4.7 Diode thermal resistance, junction – case RthJCD TO-220-3-31 Other packages 12 10 K/W Therm. resistance, junction - ambient RthJA P-TO-220-3-31 P-TO-220-3-1 65 62 SMD version, device on PCB: @ min. footprint @ 6cm 2 cooling area1 @ min. footprint @ 6cm 2 cooling area1 RthJA P-TO-263-3-2 P-TO-252-3-1 75 50 62 40 1 Device on 40mm*40mm*1.5mm epoxy PCB FR4with 6cm2 (one layer, 70µm thick) copper area for drain connection. PCB is vertical without blown air. Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Value Parameter Symbol Conditions min. typ. max. Unit Static Characteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V, IC=0.5mA 600 - - Collector-emitter avalanche breakdown voltage V(BR)CE VGS=0V; IC=0.4A - 850 - VGE=10V, IC=3.0A Tj=25 °C Tj=150 °C - - 2.3 2.7 2.9 Collector-emitter saturation voltage VCE(sat) VGE=10V, IC=0.8A Tj=25 °C Tj=150 °C - - 1.5 1.5 - - VGE=0V, IF=3.0A Tj=25 °C Tj=150 °C - - 1.5 1.6 1.8 V Diode forward voltage VF VGE=0V, IF=0.8A Tj=25 °C Tj=150 °C - - 1.0 1.0 - - V Gate-emitter threshold voltage VGE(th) IC=30µA,VCE=VGE 2.1 3.0 3.9 V |
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