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THNCFXXXBAI Datasheet(PDF) 35 Page - Toshiba Semiconductor |
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THNCFXXXBAI Datasheet(HTML) 35 Page - Toshiba Semiconductor |
35 / 48 page ![]() THNCFxxxMBA/BAI Series 2002-10-20 35/48 Preliminary DC CHARACTERISTICS (VCC ==== 3.3 V ±±±± 0.3V, VCC ==== 5 V ±±±± 0.5V) Ta = 0°C~70°C for THNCFxxxMBA (Commercial grade) Ta = -40°C~85°C for THNCFxxxMBAI (Industrial grade) Input Characteristics Type SYMBOL PARAMETER MIN MAX TYP UNIT CONDITION VIH Input High Voltage CMOS (5V Tolerance) 2.0 2.0 VCC = 3.3 V VCC = 5 V 1 VIL Input Low Voltage CMOS (5V Tolerance) 1.0 1.0 VCC = 3.3 V VCC = 5 V VIH Input High Voltage (3.3V : CMOS 5V: TTL) 2.0 2.0 VCC = 3.3 V VCC = 5 V 2 VIL Input Low Voltage CMOS (3.3V : CMOS 5V: TTL) 1.0 0.8 VCC = 3.3 V VCC = 5 V VT+ Input High Voltage CMOS with Schmitt trigger (5V Tolerance) 2.5 2.5 2.1 2.1 VCC = 3.3 V VCC = 5 V 3 VT- Input Low Voltage CMOS with Schmitt trigger (5V Tolerance) 0.9 0.9 1.2 1.2 VCC = 3.3 V VCC = 5 V VT+ Input High Voltage with Schmitt trigger (3.3V : CMOS 5V: TTL) 2.3 2.0 2.1 1.8 VCC = 3.3 V VCC = 5 V 4 VT- Input Low Voltage with Schmitt trigger (3.3V : CMOS 5V: TTL) 1.0 0.8 1.2 1.1 V VCC = 3.3 V VCC = 5 V Output Drive Characteristics Type SYMBOL PARAMETER MIN MAX TYP UNIT CONDITION VOH Output High Voltage VCC − 0.8 1 VOL Output Low Voltage Gnd + 0.4 V IOH = −4mA IOL = 4mA SYMBOL PARAMETER MIN MAX TYP. UNIT TEST CONDITIONS ILI Input leakage current 1 µA ILO Output leakage current 1 µA VOUT = high impedance −IPU Pull-up current (Resistivity) 43 (75) µA (kΩ) VFORCE = 3.3V −IPD Pull-down current (Resistivity) −48 / (206) µA (kΩ) VFORCE = 0V ICCS Sleep mode current 1.5 2.0 1.0 1.2 mA VCC = 3.3V VCC = 5V Operating current @ 3.3V Write operation Read operation 38 30 mA VCC = 3.3V operation ICCO Operating current @ 5V Write operation Read operation 43 35 mA VCC = 5V operation |