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THNCFXXXBAI Datasheet(PDF) 35 Page - Toshiba Semiconductor

Part No. THNCFXXXBAI
Description  The THNCFxxxMBA/BAI series CompactFlash card is a flash technology based with ATA interface flash memory card.
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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THNCFXXXBAI Datasheet(HTML) 35 Page - Toshiba Semiconductor

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THNCFxxxMBA/BAI Series
2002-10-20
35/48
Preliminary
DC CHARACTERISTICS (VCC
==== 3.3 V ±±±± 0.3V, VCC ==== 5 V ±±±± 0.5V)
Ta
= 0°C~70°C for THNCFxxxMBA (Commercial grade)
Ta
= -40°C~85°C for THNCFxxxMBAI (Industrial grade)
Input Characteristics
Type
SYMBOL
PARAMETER
MIN
MAX
TYP
UNIT
CONDITION
VIH
Input High Voltage CMOS
(5V Tolerance)
2.0
2.0
VCC = 3.3 V
VCC = 5 V
1
VIL
Input Low Voltage CMOS
(5V Tolerance)
1.0
1.0
VCC = 3.3 V
VCC = 5 V
VIH
Input High Voltage
(3.3V : CMOS
5V: TTL)
2.0
2.0
VCC = 3.3 V
VCC = 5 V
2
VIL
Input Low Voltage CMOS
(3.3V : CMOS
5V: TTL)
1.0
0.8
VCC = 3.3 V
VCC = 5 V
VT+
Input High Voltage CMOS with Schmitt trigger
(5V Tolerance)
2.5
2.5
2.1
2.1
VCC = 3.3 V
VCC = 5 V
3
VT-
Input Low Voltage CMOS with Schmitt trigger
(5V Tolerance)
0.9
0.9
1.2
1.2
VCC = 3.3 V
VCC = 5 V
VT+
Input High Voltage with Schmitt trigger
(3.3V : CMOS
5V: TTL)
2.3
2.0
2.1
1.8
VCC = 3.3 V
VCC = 5 V
4
VT-
Input Low Voltage with Schmitt trigger
(3.3V : CMOS
5V: TTL)
1.0
0.8
1.2
1.1
V
VCC = 3.3 V
VCC = 5 V
Output Drive Characteristics
Type
SYMBOL
PARAMETER
MIN
MAX
TYP
UNIT
CONDITION
VOH
Output High Voltage
VCC − 0.8
1
VOL
Output Low Voltage
Gnd + 0.4
V
IOH = −4mA
IOL = 4mA
SYMBOL
PARAMETER
MIN
MAX
TYP.
UNIT
TEST CONDITIONS
ILI
Input leakage current
1
µA
ILO
Output leakage current
1
µA
VOUT = high
impedance
−IPU
Pull-up current (Resistivity)
43 (75)
µA (kΩ)
VFORCE = 3.3V
−IPD
Pull-down current (Resistivity)
−48 / (206)
µA (kΩ)
VFORCE = 0V
ICCS
Sleep mode current
1.5
2.0
1.0
1.2
mA
VCC = 3.3V
VCC = 5V
Operating current @ 3.3V
Write operation
Read operation
38
30
mA
VCC = 3.3V operation
ICCO
Operating current @ 5V
Write operation
Read operation
43
35
mA
VCC = 5V operation


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