BDX34B datasheet(4/6 Pages) ONSEMI

Part #	BDX34B

Description	DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

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Manufacturer	ONSEMI [ON Semiconductor]

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BDX33B BDX33C BDX34B BDX34C

4

Motorola Bipolar Power Transistor Device Data

0.1

Figure 5. DC Current Gain

IC, COLLECTOR CURRENT (AMP)

0.2

0.3

0.5 0.7

1.0

2.0

10

500

300

TJ = 150°C

25

°C

– 55

°C

VCE = 4.0 V

200

7.0

NPN

BDX33B, 33C

PNP

BDX34B, 34C

20,000

5000

10,000

3000

2000

1000

3.0

5.0

0.1

IC, COLLECTOR CURRENT (AMP)

0.2 0.3

0.5 0.7

1.0

2.0

10

500

300

TJ = 150°C

25

°C

– 55

°C

200

7.0

20,000

5000

10,000

3000

2000

1000

3.0

5.0

VCE = 4.0 V

Figure 6. Collector Saturation Region

3.0

IB, BASE CURRENT (mA)

0.3

0.5

1.0

2.0

3.0

5.0 7.0

30

2.6

2.2

1.8

1.4

IC = 2.0 A

TJ = 25°C

4.0 A

6.0 A

1.0

0.7

20

10

3.0

IB, BASE CURRENT (mA)

0.3

0.5

1.0

2.0

3.0

5.0 7.0

30

2.6

2.2

1.8

1.4

IC = 2.0 A

TJ = 25°C

4.0 A

6.0 A

1.0

0.7

20

10

IC, COLLECTOR CURRENT (AMP)

VBE(sat) @ IC/IB = 250

Figure 7. “On” Voltages

IC, COLLECTOR CURRENT (AMP)

VBE(sat) @ IC/IB = 250

VCE(sat) @ IC/IB = 250

TJ = 25°C

VBE @ VCE = 4.0 V

VCE(sat) @ IC/IB = 250

TJ = 25°C

0.1

0.2 0.3

0.5 0.7

1.0

2.0

10

7.0

3.0

5.0

0.1

0.2 0.3

0.5 0.7

1.0

2.0

10

7.0

3.0

5.0

3.0

2.5

2.0

1.5

1.0

0.5

3.0

2.5

2.0

1.5

1.0

0.5

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