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BDX53B Datasheet(PDF) 2 Page - ON Semiconductor

Part No. BDX53B
Description  DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 80-100 VOLTS 65 WATTS
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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BDX53B Datasheet(HTML) 2 Page - ON Semiconductor

   
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BDX53B BDX53C BDX54B BDX54C
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
(IC = 100 mAdc, IB = 0)
BDX53B, BDX54B
BDX53C, BDX54C
VCEO(sus)
80
100
Vdc
Collector Cutoff Current
(VCE = 40 Vdc, IB = 0)
BDX53B, BDX54B
(VCE = 50 Vdc, IB = 0)
BDX53C, BDX54C
ICEO
0.5
0.5
mAdc
Collector Cutoff Current
(VCB = 80 Vdc, IE = 0)
BDX53B, BDX54B
(VCB = 100 Vdc, IE = 0)
BDX53C, BDX54C
ICBO
0.2
0.2
mAdc
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 3.0 Adc, VCE = 3.0 Vdc)
hFE
750
Collector–Emitter Saturation Voltage
(IC = 3.0 Adc, IB = 12 mAdc)
VCE(sat)
2.0
4.0
Vdc
Base–Emitter Saturation Voltage
(IC = 3.0 Adc, IC = 12 mA)
VBE(sat)
2.5
Vdc
DYNAMIC CHARACTERISTICS
Small–Signal Current Gain
(IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz)
hfe
4.0
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
BDX53B, 53C
BDX54B, 54C
Cob
300
200
pF
(1) Pulse Test: Pulse Width
v 300 µs, Duty Cycle v 2%.
Figure 2. Switching Time Test Circuit
5.0
0.1
Figure 3. Switching Times
IC, COLLECTOR CURRENT (AMP)
3.0
0.7
0.5
0.3
0.2
0.05
0.2
0.3
0.7
3.0
10
td @ VBE(off) = 0 V
VCC = 30 V
IC/IB = 250
IB1 = IB2
TJ = 25°C
tf
0.07
1.0
5.0
ts
tr
0.1
1.0
2.0
0.5
2.0
7.0
0
VCC
– 30 V
SCOPE
TUT
+ 4.0 V
tr, tf v 10 ns
DUTY CYCLE = 1.0%
RC
D1 MUST BE FAST RECOVERY TYPES, e.g.:
1N5825 USED ABOVE IB [ 100 mA
MSD6100 USED BELOW IB [ 100 mA
25
µs
D1
51
RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
V2
APPROX
+ 8.0 V
V1
APPROX
–12 V
[ 8.0 k
[ 120
for td and tr, D1 is disconnected
and V2 = 0
For NPN test circuit reverse all polarities
RB


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