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BDX53B Datasheet(PDF) 1 Page - ON Semiconductor

Part No. BDX53B
Description  DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 80-100 VOLTS 65 WATTS
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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BDX53B Datasheet(HTML) 1 Page - ON Semiconductor

   
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Motorola Bipolar Power Transistor Device Data
Plastic Medium-Power
Complementary Silicon
Transistors
. . . designed for general–purpose amplifier and low–speed switching applications.
• High DC Current Gain —
hFE = 2500 (Typ) @ IC = 4.0 Adc
• Collector Emitter Sustaining Voltage — @ 100 mAdc
VCEO(sus) = 80 Vdc (Min) — BDX53B, 54B
VCEO(sus) = 100 Vdc (Min) — BDX53C, 54C
• Low Collector–Emitter Saturation Voltage —
VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc
VCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc
• Monolithic Construction with Built–In Base–Emitter Shunt Resistors
• TO–220AB Compact Package
MAXIMUM RATINGS
Rating
Symbol
BDX53B
BDX54B
BDX53C
BDX54C
Unit
Collector–Emitter Voltage
VCEO
80
100
Vdc
Collector–Base Voltage
VCB
80
100
Vdc
Emitter–Base Voltage
VEB
5.0
Vdc
Collector Current — Continuous
Peak
IC
8.0
12
Adc
Base Current
IB
0.2
Adc
Total Device Dissipation @ TC = 25_C
Derate above 25
_C
PD
60
0.48
Watts
W/
_C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 65 to + 150
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R
θJA
70
_C/W
Thermal Resistance, Junction to Case
R
θJC
70
_C/W
80
40
20
0
20
40
80
100
120
160
Figure 1. Power Derating
T, TEMPERATURE (
°C)
60
TA TC
4.0
2.0
1.0
3.0
0
60
140
TA
TC
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BDX53B/D
© Motorola, Inc. 1995
BDX53B
BDX53C
BDX54B
BDX54C
DARLINGTON
8 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
80 – 100 VOLTS
65 WATTS
CASE 221A–06
TO–220AB
NPN
PNP
REV 7


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