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TPC8010-H Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part No. TPC8010-H
Description  TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOSIII)
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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TPC8010-H Datasheet(HTML) 2 Page - Toshiba Semiconductor

   
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TPC8010-H
2002-03-12
2
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to ambient
(t
= 10 s)
(Note 2a)
Rth (ch-a)
65.8
°C/W
Thermal resistance, channel to ambient
(t
= 10 s)
(Note 2b)
Rth (ch-a)
125
°C/W
Marking (Note 5)
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a)
(b) Device mounted on a glass-epoxy board (b)
Note 3: VDD = 24 V, Tch = 25°C (initial), L = 1.0 mH, RG = 25 Ω, IAR = 11 A
Note 4: Repetitive rating: pulse width limited by maximum channel temperature
Note 5:
• on lower left of the marking indicates Pin 1.
※ shows lot number. (year of manufacture: last decimal digit of the year of manufacture, month of
manufacture: January to December are denoted by letters A to L respectively.)
TYPE
TPC8010
H
(a)
FR-4
25.4
× 25.4 × 0.8
(unit: mm)
(b)
FR-4
25.4
× 25.4 × 0.8
(unit: mm)


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