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BSP50 Datasheet(PDF) 2 Page - ON Semiconductor

Part No. BSP50
Description  NPN Darlington Transistor
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

BSP50 Datasheet(HTML) 2 Page - ON Semiconductor

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©2004 Fairchild Semiconductor Corporation
Rev. A, May 2004
Absolute Maximum Ratings* T
a=25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150
°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics T
a=25°C unless otherwise noted
Thermal Characteristics T
A=25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCER
Collector-Emitter Voltage
45
V
VCBO
Collector-Base Voltage
60
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current
- Continuous
800
mA
TJ, TSTG
Operating and Storage Junction Temperature Range
- 55 ~ +150
°C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 100µA, IE = 0
60
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 10µA, IC = 0
5
V
ICES
Collector Cutoff Current
VCE = 45V, VBE = 0
50
nA
IEBO
Emitter Cutoff Current
VEB = 4.0V, IC = 0
50
nA
On Characteristics
hFE
DC Current Gain
IC = 150mA, VCE = 10V
IC = 500mA, VCE = 10V
1000
2000
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 500mA, IB = 0.5mA
1.3
V
VBE(sat)
Base-Emitter Saturation Voltage
IC = 500mA, IB = 0.5mA
1.9
V
Symbol
Parameter
Max.
Units
PD
Total Device Dissipation
Derate above 25
°C
1000
8.0
mW
mW/
°C
RθJA
Thermal Resistance, Junction to Ambient
125
°C/W
BSP50
NPN Darlington Transistor
• This device is designed for applications requiring extremly high current
gain at collector currents to 500mA.
• Sourced from process 03.
SOT-223
1
2
4
3
1. Base 2. Collector 3. Emitter


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