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2SA1943 Datasheet(PDF) 2 Page - ON Semiconductor

Part # 2SA1943
Description  PNP Epitaxial Silicon Transistor
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
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© 2009 Fairchild Semiconductor Corporation
www.fairchildsemi.com
2SA1943/FJL4215 Rev. C
1
January 2009
2SA1943/FJL4215
PNP Epitaxial Silicon Transistor
Applications
High-Fidelity Audio Output Amplifier
General Purpose Power Amplifier
Features
High Current Capability: IC = -17A.
High Power Dissipation : 150watts.
High Frequency : 30MHz.
High Voltage : VCEO= -250V
Wide S.O.A for reliable operation.
Excellent Gain Linearity for low THD.
Complement to 2SC5200/FJL4315.
Full thermal and electricalSpice models are available.
Same transistor is also available in:
-- TO3P package, 2SA1962/FJA4213 : 130 watts
-- TO220 package, FJP1943 : 80 watts
-- TO220F package, FJPF1943 : 50 watts
Absolute Maximum Ratings* T
a = 25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics* T
a=25°C unless otherwise noted
* Device mounted on minimum pad size
hFE Classification
Symbol
Parameter
Ratings
Units
BVCBO
Collector-Base Voltage
-250
V
BVCEO
Collector-Emitter Voltage
-250
V
BVEBO
Emitter-Base Voltage
-5
V
IC
Collector Current
-17
A
IB
Base Current
-1.5
A
PD
Total Device Dissipation(TC=25°C)
Derate above 25
°C
150
1.04
W
W/
°C
TJ, TSTG
Junction and Storage Temperature
- 50 ~ +150
°C
Symbol
Parameter
Max.
Units
RθJC
Thermal Resistance, Junction to Case
0.83
°C/W
Classification
R
O
hFE1
55 ~ 110
80 ~ 160
1.Base 2.Collector 3.Emitter
1
TO-264


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