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BD244C Datasheet(PDF) 3 Page - ON Semiconductor |
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BD244C Datasheet(HTML) 3 Page - ON Semiconductor |
3 / 6 page BD243B BD243C BD244B BD244C 3 Motorola Bipolar Power Transistor Device Data Figure 4. Thermal Response t, TIME OR PULSE WIDTH (ms) 1.0 0.01 0.01 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1000 500 R θJC(max) = 1.92°C/W D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) – TC = P(pk) R θJC(t) P(pk) t1 t2 DUTY CYCLE, D = t1/t2 D = 0.5 SINGLE PULSE 0.2 0.05 0.1 0.02 0.01 SINGLE PULSE 0.03 0.3 3.0 30 300 SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMAL LIMITATION @ TC = 25°C CURVES APPLY BELOW RATED VCEO 10 5.0 Figure 5. Active Region Safe Operating Area 5.0 1.0 0.1 10 20 60 100 TJ = 150°C BD243B, BD244B BD243C, BD244C 5.0 ms 0.5 ms 0.2 2.0 0.5 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 3.0 0.3 40 80 1.0 ms There are two limitations on the power handling ability of a transistor: average junction temperature and second break- down. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipa- tion than the curves indicate. The data of Figure 5 is based on TJ(pk) = 150_C: TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) v 150_C, TJ(pk) may be calculated from the data in Fig- ure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 5.0 0.06 Figure 6. Turn-Off Time IC, COLLECTOR CURRENT (AMP) 2.0 1.0 0.5 0.3 0.2 0.1 0.07 0.05 0.1 0.2 0.4 0.6 2.0 6.0 TJ = 25°C VCC = 30 V IC/IB = 10 IB1 = IB2 ts 1.0 4.0 0.7 3.0 tf 300 0.5 Figure 7. Capacitance VR, REVERSE VOLTAGE (VOLTS) 30 1.0 2.0 3.0 5.0 20 30 50 10 200 100 70 50 TJ = 25°C Cib Cob |
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