SUD17N25-165 datasheet(4/4 Pages) VISHAY

Part #	SUD17N25-165

Description	N-Channel 250-V (D-S) 175C MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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SUD17N25-165

Vishay Siliconix

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Document Number: 72851

S-40578—Rev. A, 29-Mar-04

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0.4

0.8

1.2

1.6

2.0

2.4

2.8

−50 −25

0

25

50

75

100 125 150 175

On-Resistance vs. Junction Temperature

Source-Drain Diode Forward Voltage

TJ − Junction Temperature (_C)

VSD − Source-to-Drain Voltage (V)

100

10

1

0.3

0.6

0.9

1.2

VGS = 10 V

ID = 17 A

TJ = 25_C

TJ = 150_C

0

THERMAL RATINGS

0.02

Safe Operating Area

VDS − Drain-to-Source Voltage (V)

10

0.1

1

10

1000

Limited by rDS(on)

1

100

TC = 25_C

Single Pulse

Normalized Thermal Transient Impedance, Junction-to-Case

Square Wave Pulse Duration (sec)

2

1

0.1

0.01

10−4

10−3

10−2

10−1

Maximum Avalanche Drain Current

vs. Case Temperature

TC − Case Temperature (_C)

0

4

8

12

16

20

0

25

50

75

100

125

150

175

0.2

0.1

Duty Cycle = 0.5

10 ms

100 ms, dc

1

100 ms

10 ms

100

1 ms

0.05

Single Pulse

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