1

Publication date: July 2003

SJJ00258BED

Composite Transistors

NP061A3

Silicon PNP epitaxial planar transistor

For digital circuits

■ Features

• SSS-Mini type 6-pin package, reduction of the mounting area and

assembly cost by one half

• Maximum package height (0.4 mm) contributes to develop thinner

equipments

■ Basic Part Number

• UNR31A3 × 2

■ Absolute Maximum Ratings T

a

= 25°C

1: Emitter (Tr1)

4: Collector (Tr2)

2: Emitter (Tr2)

5: Base (Tr1)

3: Base (Tr2)

6: Collector (Tr1)

SSSMini6-F1 Package

Unit: mm

Internal Connection

Marking Symbol: 1P

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-base voltage (Emitter open)

−50

V

Collector-emitter voltage (Base open)

−50

V

Collector-base cutoff current (Emitter open)

= −50 V, I

E

= 0

− 0.1

µA

Collector-emitter cutoff current (Base open)

− 0.5

µA

Emitter-base cutoff current (Collector open)

− 0.1

mA

Forward current transfer ratio

= −10 V, I

C

= −5 mA

80



= −10 V, I

C

= −5 mA

0.50

0.99



/Large)

Collector-emitter saturation voltage

− 0.25

V

Output voltage high-level

V

Output voltage low-level

= −5 V, V

B

= −3.5 V, R

L

= 1 kΩ− 0.2

V

Input resistance

−30%

47

+30%

k

Ω

Resistance ratio

0.8

1.0

1.2



Transition frequency

= −10 V, I

E

= 1 mA, f = 200 MHz

80

MHz

■ Electrical Characteristics T

a

= 25°C ± 3°C

0 to 0.02

65

4

1

2

3

1.00

±0.05

Display at No.1 lead

(0.35)

(0.35)

-0.02

1

Tr2

Tr1

23

4

6

5

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open)

−50

V

Collector-emitter voltage (Base open)

−50

V

Collector current

−80

mA

125

mW

Junction temperature

125

°C

Storage temperature

−55 to +125

°C

Note) *: Measuring on substrate at 17 mm

× 10 mm × 1 mm

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *: Ratio between one and another