SUP75N08-10 datasheet(1/4 Pages) VISHAY

Part #	SUP75N08-10

Description	N-Channel 75-V (D-S), 175 Degrees Celcious MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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SUP/SUB75N08-10

Vishay Siliconix

Document Number: 70263

S-57253—Rev. B, 24-Feb-98

www.vishay.com

S FaxBack 408-970-5600

2-1

N-Channel 75-V (D-S), 175

_C MOSFET

PRODUCT SUMMARY

V(BR)DSS (V)

rDS(on) (W)

ID (A)

75

0.010

75a

D

G

S

N-Channel MOSFET

TO-220AB

Top View

GD S

DRAIN connected to TAB

TO-263

S

D

G

Top View

SUP75N08-10

SUB75N08-10

ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Limit

Unit

Gate-Source Voltage

VGS

"20

V

Continuous Drain Current

(T

175

_C)

TC = 25_C

ID

75a

A

(TJ = 175_C)

TC = 125_C

ID

55

A

Pulsed Drain Current

IDM

240

A

Avalanche Current

IAR

60

Repetitive Avalanche Energyb

L = 0.1 mH

EAR

280

mJ

Power Dissipation

TC = 25_C (TO-220AB and TO-263)

PD

187c

W

Power Dissipation

TA = 25_C (TO-263)d

PD

3.7

W

Operating Junction and Storage Temperature Range

TJ, Tstg

–55 to 175

_C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Limit

Unit

Junction to Ambient

PCB Mount (TO-263)d

R hJA

40

_C/W

Junction-to-Ambient

Free Air (TO-220AB)

RthJA

62.5

_C/W

Junction-to-Case

RthJC

0.8

Notes

a.

Package limited.

b.

Duty cycle

v 1%.

c.

See SOA curve for voltage derating.

d.

When mounted on 1” square PCB (FR-4 material).

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