© 2002 Fairchild Semiconductor Corporation

www.fairchildsemi.com

FJV4113R Rev. 1.1.2

1

November 2013

FJV4113R

PNP Epitaxial Silicon Transistor with Bias Resistor

Features

• 100 mA Output Current Capability

Application

• Switching, Interface, and Driver Circuits

• Inverters

• Digital Applications in Industrial Segments

Ordering Information

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

Part Number

Top Mark

Package

Packing Method

FJV4113RMTF

R83

SOT-23 3L

Tape and Reel

Symbol

Parameter

Value

Unit

Collector-Base Voltage

-50

V

Collector-Emitter Voltage

-50

V

Emitter-Base Voltage

-10

V

Collector Current

-100

mA

Junction Temperature

150

°C

Storage Temperature

-55 to 150

°C

SOT-23

1. Base 2. Emitter 3. Collector

1

2

3

C

E

B

R1

R2

Equivalent Circuit

Description

Transistors with built-in resistors can be excellent

space- and cost-saving solutions by reducing compo-

nent count and simplifying circuit design.