M390S6450CT1 datasheet(6/12 Pages) SAMSUNG

Part #	M390S6450CT1

Description	64Mx72 SDRAM DIMM with PLL & Register based on 64Mx4, 4Banks, 8K Ref., 3.3V Synchronous DRAMs with SPD

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Manufacturer	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

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M390S6450CT1

PC133 Registered DIMM

Rev. 0.2 Sept. 2001

DC CHARACTERISTICS

(Recommended operating condition unless otherwise noted, TA = 0 to 70

°C)

Parameter

Symbol

Test Condition

Version

Unit

Note

-7C

-7A

Operating current

(One bank active)

ICC1

Burst length =1

tRC

≥ tRC(min)

IO = 0 mA

2300

2120

mA

1

Precharge standby current in

power-down mode

ICC2P

CKE

≤ VIL(max), tCC = 10ns

386

mA

3

ICC2PS

CKE & CLK

≤ VIL(max), tCC = ∞

38

Precharge standby current in

non power-down mode

ICC2N

CKE

≥ VIH(min), CS ≥ VIH(min), tCC = 10ns

Input signals are changed one time during 20ns

710

mA

3

ICC2NS

CKE

≥ VIH(min), CLK ≤ VIL(max), tCC = ∞

Input signals are stable

182

Active standby current in

power-down mode

ICC3P

CKE

≤ VIL(max), tCC = 10ns

458

mA

3

ICC3PS

CKE & CLK

≤ VIL(max), tCC = ∞

110

Active standby current in

non power-down mode

ICC3N

CKE

≥ VIH(min), CS ≥ VIH(min), tCC = 10ns

Input signals are changed one time during 20ns

890

mA

3

ICC3NS

CKE

≥ VIH(min), CLK ≤ VIL(max), tCC = ∞

Input signals are stable

452

mA

3

Operating current

(Burst mode)

ICC4

IO = 0mA

Page Burst

4 Banks activated

tCCD=2CLK

2480

mA

1

Refresh current

ICC5

tRC

≥ tRC(min)

4460

4100

mA

2

Self refresh current

ICC6

CKE

≤ 0.2V

404

mA

3

1. Measured with outputs open.

2. Refresh period is 64ms.

3. Measured with 1 PLL & 3 Drive ICs.

4. Unless otherwise noted, input swing level is CMOS(VIH/VIL=VDDQ/VSSQ)

Notes :

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