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K6F8016U6D Datasheet(PDF) 3 Page - Samsung semiconductor

Part # K6F8016U6D
Description  512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K6F8016U6D Datasheet(HTML) 3 Page - Samsung semiconductor

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K6F8016U6D Family
Revision 1.0
January 2005
3
CMOS SRAM
PRODUCT LIST
Industrial Temperature Products(-40~85
°C)
Part Name
Function
K6F8016U6D-FF55
K6F8016U6D-FF70
K6F8016U6D-XF55
K6F8016U6D-XF70
48-FBGA, 55ns, 3.0V
48-FBGA, 70ns, 3.0V
48-FBGA, 55ns, 3.0V, Lead Free
48-FBGA, 70ns, 3.0V, Lead Free
ABSOLUTE MAXIMUM RATINGS1)
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be
restricted to be used under recommended operating condition. Exposure to absolute maximum rating conditions over 1 second may affect reliability.
Item
Symbol
Ratings
Unit
Voltage on any pin relative to Vss
VIN, VOUT
-0.5 to VCC+0.3V(Max. 3.6V)
V
Voltage on Vcc supply relative to Vss
VCC
-0.3 to 3.6
V
Power Dissipation
PD
1.0
W
Storage temperature
TSTG
-65 to 150
°C
Operating Temperature
TA
-40 to 85
°C
FUNCTIONAL DESCRIPTION
1. X means don
′t care. (Must be low or high state)
CS1
CS2
OE
WE
LB
UB
I/O1~8
I/O9~16
Mode
Power
H
X1)
X1)
X1)
X1)
X1)
High-Z
High-Z
Deselected
Standby
X1)
L
X1)
X1)
X1)
X1)
High-Z
High-Z
Deselected
Standby
X1)
X1)
X1)
X1)
H
H
High-Z
High-Z
Deselected
Standby
LH
H
H
L
X1)
High-Z
High-Z
Output Disabled
Active
LH
H
H
X1)
L
High-Z
High-Z
Output Disabled
Active
L
H
L
H
L
H
Dout
High-Z
Lower Byte Read
Active
L
H
L
H
H
L
High-Z
Dout
Upper Byte Read
Active
L
H
L
H
L
L
Dout
Dout
Word Read
Active
LH
X1)
L
L
H
Din
High-Z
Lower Byte Write
Active
LH
X1)
L
H
L
High-Z
Din
Upper Byte Write
Active
LH
X1)
L
L
L
Din
Din
Word Write
Active


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