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M5M4V64S30ATP-8A Datasheet(PDF) 23 Page - Mitsubishi Electric Semiconductor |
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M5M4V64S30ATP-8A Datasheet(HTML) 23 Page - Mitsubishi Electric Semiconductor |
23 / 51 page ![]() MITSUBISHI LSIs MITSUBISHI ELECTRIC 64M (4-BANK x 2097152-WORD x 8-BIT) Synchronous DRAM M5M4V64S30ATP-8A,-8L,-8, -10L, -10 Mar'98 SDRAM (Rev.1.3) [ Write Interrupted by Precharge ] Burst write operation can be interrupted by precharge of the same bank . Random column access is al- lowed. Write recovery time (tWR) is required from the last data to PRE command. Write Interrupted by Precharge (BL=4) CLK Command A0-9 A10 BA0,1 DQ Write Yi 0 00 PRE 0 00 DQM ACT Xb Xb 00 tWR tRP A11 Xb Dai0 Dai1 Dai2 23 [ Write Interrupted by Burst Terminate ] A burst terminate command TBST can be used to terminate a burst write operation. In this case, the write recovery time is not required and the bank remains active (Please see the waveforms below). The WRITE to TBST minimum interval is one CLK. Write Interrupted by Burst Terminate(BL=4) CLK Command A0-9 A10 BA DQ WRITE Yi 0 0 Dai0 DQMU/DQML (DQM) TBST Dai1 Dai2 |
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