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M5M4V64S30ATP-8A Datasheet(PDF) 1 Page - Mitsubishi Electric Semiconductor

Part No. M5M4V64S30ATP-8A
Description  64M (4-BANK x 2097152-WORD x 8-BIT) Synchronous DRAM
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

M5M4V64S30ATP-8A Datasheet(HTML) 1 Page - Mitsubishi Electric Semiconductor

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MITSUBISHI LSIs
MITSUBISHI ELECTRIC
64M (4-BANK x 2097152-WORD x 8-BIT) Synchronous DRAM
M5M4V64S30ATP-8A,-8L,-8, -10L, -10
Mar'98
SDRAM (Rev.1.3)
DESCRIPTION
The M5M4V64S30ATP is a 4-bank x 2097152-word x 8-bit
Synchronous DRAM, with LVTTL interface. All inputs and
outputs are referenced to the rising edge of CLK. The
M5M4V64S30ATP achieves very high speed data rate up to
125MHz, and is suitable for main memory or graphic memory
in computer systems.
FEATURES
- Single 3.3v±0.3v power supply
- Fully synchronous operation referenced to clock rising edge
- 4 bank operation controlled by BA0, BA1 (Bank Address)
- /CAS latency- 2/3 (programmable)
- Burst type- sequential / interleave (programmable)
- Column access - random
- Auto precharge / All bank precharge controlled by A10
- Auto refresh and Self refresh
- 4096 refresh cycles /64ms
- Column address A0-A8
- LVTTL Interface
- 400-mil, 54-pin Thin Small Outline Package (TSOP II) with
0.8mm lead pitch
Some of contents are subject to change without notice.
CLK
: Master Clock
CKE
: Clock Enable
/CS
: Chip Select
/RAS
: Row Address Strobe
/CAS
: Column Address Strobe
/WE
: Write Enable
DQ0-7
: Data I/O
DQM
: Output Disable/ Write Mask
A0-11
: Address Input
BA0,1
: Bank Address
Vdd
: Power Supply
VddQ
: Power Supply for Output
Vss
: Ground
VssQ
: Ground for Output
PIN CONFIGURATION
(TOP VIEW)
Max.
Frequency
CLK Access
Time
M5M4V64S30ATP-8A
125MHz
6ns
1
- Clock frequency 125MHz /100MHz
M5M4V64S30ATP-10
100MHz
8ns
M5M4V64S30ATP-8
100MHz
6ns
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
54
53
52
51
50
49
48
47
46
45
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43
42
41
40
39
38
37
36
35
34
33
Vdd
DQ0
VddQ
NC
DQ1
VssQ
NC
DQ2
VddQ
NC
DQ3
VssQ
NC
Vdd
NC
/WE
/CAS
/RAS
/CS
BA0(A13)
BA1(A12)
A10
Vss
DQ7
VssQ
NC
DQ6
VddQ
NC
DQ5
VssQ
NC
DQ4
VddQ
NC
Vss
NC
DQM
CLK
CKE
NC
A11
A8
A7
23
32
24
31
25
30
26
29
27
28
A2
A3
Vdd
A0
A1
A6
A5
A4
Vss
A9
- Burst length- 1/2/4/8/Full Page (programmable)
- Burst Write / Single Write (programmable)


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