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M5M4V64S30ATP-8A Datasheet(PDF) 29 Page - Mitsubishi Electric Semiconductor

Part No. M5M4V64S30ATP-8A
Description  64M (4-BANK x 2097152-WORD x 8-BIT) Synchronous DRAM
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

M5M4V64S30ATP-8A Datasheet(HTML) 29 Page - Mitsubishi Electric Semiconductor

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MITSUBISHI LSIs
MITSUBISHI ELECTRIC
64M (4-BANK x 2097152-WORD x 8-BIT) Synchronous DRAM
M5M4V64S30ATP-8A,-8L,-8, -10L, -10
Mar'98
SDRAM (Rev.1.3)
AVERAGE SUPPLY CURRENT from Vdd
(Ta=0 ~ 70°C, Vdd = VddQ = 3.3 ± 0.3v, Vss = VssQ = 0v, Output Open, unless otherwise noted)
AC OPERATING CONDITIONS AND CHARACTERISTICS
(Ta=0 ~ 70°C, Vdd = VddQ = 3.3 ± 0.3v, Vss = VssQ = 0v, unless otherwise noted)
II
Symbol
Parameter
Test Conditions
Limits
Unit
Min.
Max.
VOH (DC)
High-Level Output Voltage (DC)
IOH=-2mA
2.4
V
VOL (DC)
Low-Level Output Voltage (DC)
IOL= 2mA
0.4
V
IOZ
Off-state Output Current
Q floating VO=0 ~ VddQ
-5
5
µA
Input Current
VIH = 0 ~ VddQ+0.3V
-5
5
µA
Symbol
Parameter
Test Conditions
Limits (max)
Unit
Icc1s
operating current, single bank
tRC=min, tCLK=min, BL=1, CL=3
85
mA
Icc1d
operating current, dual bank
tRC=90ns, tCLK=min, BL=1, CL=3
115
mA
Icc2h
standby current, CKE=H
all banks idle, tCLK=min
mA
Icc2l
standby current, CKE=L
all banks idle, tCLK=min
2
mA
Icc3h
active standby current, CKE=H
all banks active, tCLK=min
45
mA
Icc3l
active standby current, CKE=L
all banks active, tCLK=min
2
mA
Icc4
burst current
all banks active, tCLK=min, BL=4,
CL=3
mA
Icc5
auto-refresh current
tRC=min, tCLK=min
115
mA
Icc6
self-refresh current
CKE <0.2v
29
22
115
110
115
2
55
5
150
22
115
110
135
2
55
5
150
25
135
1
mA
-8L,-10L
0.5
mA
1
0.5
-8A,-8,-10
1
-10L
-10
-8L
-8
-8A


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