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M5M4V64S30ATP-8A Datasheet(PDF) 28 Page - Mitsubishi Electric Semiconductor

Part No. M5M4V64S30ATP-8A
Description  64M (4-BANK x 2097152-WORD x 8-BIT) Synchronous DRAM
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

M5M4V64S30ATP-8A Datasheet(HTML) 28 Page - Mitsubishi Electric Semiconductor

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MITSUBISHI LSIs
MITSUBISHI ELECTRIC
64M (4-BANK x 2097152-WORD x 8-BIT) Synchronous DRAM
M5M4V64S30ATP-8A,-8L,-8, -10L, -10
Mar'98
SDRAM (Rev.1.3)
ABSOLUTE MAXIMUM RATINGS
RECOMMENDED OPERATING CONDITIONS
(Ta=0 ~ 70°C, unless otherwise noted)
CAPACITANCE
(Ta=0 ~ 70°C, Vdd = VddQ = 3.3 ± 0.3v, Vss = VssQ = 0v, unless otherwise noted)
Symbol
Parameter
Conditions
Ratings
Unit
Vdd
Supply Voltage
with respect to Vss
-0.5 ~ 4.6
V
VddQ
Supply Voltage for Output
with respect to VssQ
-0.5 ~ 4.6
V
VI
Input Voltage
with respect to Vss
-0.5 ~ Vdd+0.5
V
VO
Output Voltage
with respect to VssQ
-0.5 ~ VddQ+0.5
V
IO
Output Current
50
mA
Pd
Power Dissipation
Ta = 25 °C
1000
mW
Topr
Operating Temperature
0 ~ 70
°C
Tstg
Storage Temperature
-65 ~ 150
°C
Symbol
Parameter
Limits
Unit
Min.
Typ.
Max.
Vdd
Supply Voltage
3.0
3.3
3.6
V
Vss
Supply Voltage
0
0
0
V
VddQ
Supply Voltage for Output
3.0
3.3
3.6
V
VssQ
Supply Voltage for Output
0
0
0
V
VIH
High-Level Input Voltage all inputs
2.0
Vdd+0.3
V
VIL
Low-Level Input Voltage all inputs
-0.3
0.8
V
28
Note:*
VIH (max) = Vdd+2.0V AC for pulse width<=3ns acceptable.
VIL(min) = -2V AC for pulse width<=3ns acceptable.
Symbol
Parameter
Test Condition
max.
Unit
CI(A)
Input Capacitance, address pin
VI=Vss
5
pF
CI(C)
Input Capacitance, control pin
f=1MHz
5
pF
CI(K)
Input Capacitance, CLK pin
Vi=25mVrms
4
pF
CI/O
Input Capacitance, I/O pin
6.5
pF
min.
2.5
2.5
2.5
4


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