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BCW33LT1 Datasheet(PDF) 6 Page - ON Semiconductor |
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BCW33LT1 Datasheet(HTML) 6 Page - ON Semiconductor |
6 / 8 page BCW33LT1 http://onsemi.com 6 Figure 16A. TJ, JUNCTION TEMPERATURE (°C) 104 −4 0 DESIGN NOTE: USE OF THERMAL RESPONSE DATA A train of periodical power pulses can be represented by the model as shown in Figure 16A. Using the model and the device thermal response the normalized effective transient thermal resistance of Figure 16 was calculated for various duty cycles. To find ZθJA(t), multiply the value obtained from Figure 16 by the steady state value RθJA. Example: The MPS3904 is dissipating 2.0 watts peak under the following conditions: t1 = 1.0 ms, t2 = 5.0 ms. (D = 0.2) Using Figure 16 at a pulse width of 1.0 ms and D = 0.2, the reading of r(t) is 0.22. The peak rise in junction temperature is therefore ∆T = r(t) x P(pk) x RθJA = 0.22 x 2.0 x 200 = 88°C. For more information, see AN-569. 10−2 10−1 100 101 102 103 −2 0 0 + 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160 VCC = 30 Vdc ICEO ICBO AND ICEX @ VBE(off) = 3.0 Vdc |
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