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SI9160 Datasheet(PDF) 3 Page - Vishay Siliconix |
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SI9160 Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 11 page Si9160 Vishay Siliconix Document Number: 70029 S-40700—Rev. H, 19-Apr-04 www.vishay.com 3 SPECIFICATIONS Limits B Suffix −25 to 85_C Test Conditions Unless Otherwise Specifieda 2.7 V v VDD, VS v 6.0 V, GND = PGND Parameter Unit Maxb Typ Minb Test Conditions Unless Otherwise Specifieda 2.7 V v VDD, VS v 6.0 V, GND = PGND Symbol Output Drive (DR and DS) Output High Voltage VOH VDD = 2.7 V IOUT = −10 mA 5.15 5.2 V Output Low Voltage VOL VDD = 2.7 V VS = 5.3 V IOUT = 10 mA 0.06 0.15 V Peak Source Output Current ISOURCE VDD = 2 7 V VS = 5 3 V −300 −250 mA Peak Sink Output Current ISINK VDD = 2.7 V, VS = 5.3 V 250 300 mA Break-Before-Make tBBM VDD = 6.0 V 40 ns Logic ENABLE Delay to Output tdEN ENABLE Rising to OUTPUT, VDD = 6.0 V 1.4 ms ENABLE Logic Low VENL 0.2 VDD V ENABLE Logic High VENH 0.8 VDD V ENABLE Input Current IEN ENABLE = 0 to VDD −1.0 1.0 mA Duty Cycle Maximum Duty Cycle CYCLEMAX VDD = 6.0 V 80 95 % DMAX/SS Input Current IDMAX DMAX = 0 to VDD −100 100 nA Supply Supply Current Normal Mode fOSC = 1 MHz VDD = 2.7 V 1.1 1.5 mA Supply Current—Normal Mode IDD fOSC = 1 MHz ROSC = 7.0 kW VDD = 4.5 V 1.6 2.3 mA Supply Current—Standby Mode DD ENABLE = Low 250 330 mA Notes a. CSTRAY < 5 pF on COSC. After Start-Up, VDD of w 3 V. b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. c. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS OTHERWISE NOTED) 1.485 1.490 1.495 1.500 1.505 1.510 1.515 2 3456 7 1.485 1.490 1.495 1.500 1.505 1.510 1.515 −40 −20 0 20 40 60 80 100 VREF vs. Supply Voltage VREF vs. Temperature VDD − Supply Voltage (V) VREF with 10-mA Load T − Temperature (_C) VDD = 2.7 V VDD = 5.0 V |
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