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BC547 Datasheet(PDF) 1 Page - ON Semiconductor

Part # BC547
Description  Amplifier Transistors(NPN Silicon)
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

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Motorola Small–Signal Transistors, FETs and Diodes Device Data
Amplifier Transistors
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
BC
546
BC
547
BC
548
Unit
Collector – Emitter Voltage
VCEO
65
45
30
Vdc
Collector – Base Voltage
VCBO
80
50
30
Vdc
Emitter – Base Voltage
VEBO
6.0
Vdc
Collector Current — Continuous
IC
100
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25
°C
PD
625
5.0
mW
mW/
°C
Total Device Dissipation @ TC = 25°C
Derate above 25
°C
PD
1.5
12
Watt
mW/
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
200
°C/W
Thermal Resistance, Junction to Case
RqJC
83.3
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
BC546
(IC = 1.0 mA, IB = 0)
BC547
BC548
V(BR)CEO
65
45
30
V
Collector – Base Breakdown Voltage
BC546
(IC = 100 µAdc)
BC547
BC548
V(BR)CBO
80
50
30
V
Emitter – Base Breakdown Voltage
BC546
(IE = 10 mA, IC = 0)
BC547
BC548
V(BR)EBO
6.0
6.0
6.0
V
Collector Cutoff Current
(VCE = 70 V, VBE = 0)
BC546
(VCE = 50 V, VBE = 0)
BC547
(VCE = 35 V, VBE = 0)
BC548
(VCE = 30 V, TA = 125°C)
BC546/547/548
ICES
0.2
0.2
0.2
15
15
15
4.0
nA
µA
Order this document
by BC546/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
BC546, B
BC547, A, B, C
BC548, A, B, C
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
1
2
3
© Motorola, Inc. 1996
COLLECTOR
1
2
BASE
3
EMITTER
REV 1


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