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SI-3003KWM Datasheet(PDF) 6 Page - Sanken electric

Part No. SI-3003KWM
Description  1 A, Low-Dropout, Dual Output, 1.8 V & 2.5 V Regulator
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Maker  SANKEN [Sanken electric]
Homepage  http://www.sanken-ele.co.jp/en

SI-3003KWM Datasheet(HTML) 6 Page - Sanken electric

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1 A, Low-Dropout,
Dual Output,
1.8 V & 2.5 V Regulator
115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615-0036
Input Capacitor (C
I, 0.1 ∼ 10 µF). This is necessary
either when the input line includes inductance or when the
wiring is long.
Output Capacitor (C
O, >22 µF). This device is not
designed for a use with a very low ESR output capacitor
such as a ceramic capacitor. Output oscillation may occur
with that kind of capacitor.
ENABLE Input. The ENABLE (control) input features
an internal pull-up resistor. Leaving this input open causes
the output to turn on.
Parallel Operation. Parallel operation to increase load
current is not permitted.
Determination of DC Input Voltage. The minimum
input voltage V
I(min) should be higher than the sum of the
fixed output voltage and the maximum rated dropout
Overcurrent Protection. The SI-3000KWM series has
a built-in fold-back type overcurrent protection circuit,
which limits the output current at a start-up mode. It thus
cannot be used in applications that require current at the
start-up mode such as:
(1) constant-current load,
(2) power supply with positive and negative outputs to
common load (a center-tap type power supply), or
(3) raising the output voltage by putting a diode or a
resistor between the device ground and system ground.
Thermal Protection. Circuitry turns off the pass
transistor when the junction temperature rises above 135°C.
It is intended only to protect the device from failures due to
excessive junction temperatures and should not imply that
output short circuits or continuous overloads are permitted.
Heat Radiation and Reliability. The reliability of the
IC is directly related to the junction temperature (T
J) in its
operation. Accordingly, careful consideration should be
given to heat dissipation.
The inner frame on which the integrated circuit is mounted
is connected to the GND terminal (pin 3). Therefore, it is
very effective for heat radiation to enlarge the copper area
that is connected to the GND terminal. The graph illus-
trates the effect of the copper area on the junction-to-
ambient thermal resistance (RθJA).
The junction temperature (T
J) can be determined from
either of the following equations:
J = (PD × R
θJA) + TA
J = (PD × R
θJT) + TT
where P
D = IO1(VI – VO1) + IO2(VI – VO2) and
RθJT = 6°C/W.

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