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M5M4V64S20ATP-8 Datasheet(PDF) 4 Page - Mitsubishi Electric Semiconductor |
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M5M4V64S20ATP-8 Datasheet(HTML) 4 Page - Mitsubishi Electric Semiconductor |
4 / 48 page ![]() M5M4V64S20ATP-8, -10, -12 Jan'97 Preliminary MITSUBISHI LSIs 64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM MITSUBISHI ELECTRIC SDRAM (Rev.0.2) BASIC FUNCTIONS The M5M4V64S20ATP provides basic functions, bank (row) activate, burst read / write, bank (row) precharge, and auto / self refresh. Each command is defined by control signals of /RAS, /CAS and /WE at CLK rising edge. In addition to 3 signals, /CS ,CKE and A10 are used as chip select, refresh option, and precharge option, respectively. To know the detailed definition of commands, please see the command truth table. /CS Chip Select : L=select, H=deselect /RAS Command /CAS Command /WE Command CKE Refresh Option @refresh command A10 Precharge Option @precharge or read/write command CLK define basic commands Activate (ACT) [/RAS =L, /CAS =/WE =H] ACT command activates a row in an idle bank indicated by BA. Read (READ) [/RAS =H, /CAS =L, /WE =H] READ command starts burst read from the active bank indicated by BA. First output data appears after /CAS latency. When A10 =H at this command, the bank is deactivated after the burst read (auto-precharge, READA). Write (WRITE) [/RAS =H, /CAS =/WE =L] WRITE command starts burst write to the active bank indicated by BA. Total data length to be written is set by burst length. When A10 =H at this command, the bank is deactivated after the burst write (auto- precharge, WRITEA). Precharge (PRE) [/RAS =L, /CAS =H, /WE =L] PRE command deactivates the active bank indicated by BA. This command also terminates burst read / write operation. When A10 =H at this command, both banks are deactivated (precharge all, PREA). Auto-Refresh (REFA) [/RAS =/CAS =L, /WE =CKE =H] REFA command starts auto-refresh cycle. Refresh address including bank address are generated inter- nally. After this command, the banks are precharged automatically. 4 |
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