M5M4V64S20ATP-8 datasheet(27/48 Pages) MITSUBISHI

Part #	M5M4V64S20ATP-8

Description	64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM

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Manufacturer	MITSUBISHI [Mitsubishi Electric Semiconductor]

Direct Link	http://www.mitsubishichips.com

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27 / 48 page

M5M4V64S20ATP-8, -10, -12

Jan'97

Preliminary

MITSUBISHI LSIs

64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM

MITSUBISHI ELECTRIC

SDRAM (Rev.0.2)

AVERAGE SUPPLY CURRENT from Vdd

(Ta=0 ~ 70°C, Vdd = VddQ = 3.3 ± 0.3v, Vss = VssQ = 0v, Output Open, unless otherwise noted)

AC OPERATING CONDITIONS AND CHARACTERISTICS

(Ta=0 ~ 70°C, Vdd = VddQ = 3.3 ± 0.3v, Vss = VssQ = 0v, unless otherwise noted)

II

Symbol

Parameter

Test Conditions

Limits

Unit

Min.

Max.

VOH (DC)

High-Level Output Voltage (DC)

IOH=-2mA

2.4

V

VOL (DC)

Low-Level Output Voltage (DC)

IOL= 2mA

0.4

V

IOZ

Off-state Output Current

Q floating VO=0 ~ VddQ

-10

10

µA

Input Current

VIH = 0 ~ VddQ+0.3V

-10

10

µA

Symbol

Parameter

Test Conditions

Limits (max)

Unit

125

MHz

100

MHz

83

MHz

Icc1s

operating current, single bank

tRC=min, tCLK=min, BL=1, CL=3

95

85

75

mA

Icc1d

operating current, dual bank

tRC=min, tCLK=min, BL=1, CL=3

130

115

105

mA

Icc2h

standby current, CKE=H

all banks idle, tCLK=min

mA

Icc2l

standby current, CKE=L

all banks idle, tCLK=min

2

mA

Icc3h

active standby current, CKE=H

all banks active, tCLK=min

50

45

40

mA

Icc3l

active standby current, CKE=L

all banks active, tCLK=min

2

mA

Icc4

burst current

all banks active, tCLK=min, BL=4,

CL=3

mA

Icc5

auto-refresh current

tRC=min, tCLK=min

130

115

105

mA

Icc6

self-refresh current

CKE <0.2v

1

mA

27

130

115

105

25

22

20

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