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RN1412 Datasheet(PDF) 1 Page - Toshiba Semiconductor

Part No. RN1412
Description  Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

RN1412 Datasheet(HTML) 1 Page - Toshiba Semiconductor

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RN1412,RN1413
2001-06-07
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1412,RN1413
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN2412, RN2413
Equivalent Circuit
Maximum Ratings (Ta = 25
°°°°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
100
mA
Collector power dissipation
PC
200
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
−55~125
°C
Electrical Characteristics (Ta = 25
°°°°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 50V, IE = 0
100
nA
Emitter cut-off current
IEBO
VEB = 5V, IC = 0
100
nA
DC current gain
hFE (note)
VCE = 5V, IC = 1mA
120
700
Collector-emitter saturation voltage
VCE (sat)
IC = 5mA, IB = 0.25mA
0.1
0.3
V
Transition frequency
fT
VCE = 10V, IC = 5mA
250
MHz
Collector output capacitance
Cob
VCB = 10V, IE = 0, f = 1MHz
3
6
pF
RN1412
15.4
22
28.6
Input resistor
RN1413
R1
32.9
47
61.1
k
W
JEDEC
TO-236MOD
EIAJ
SC-59
TOSHIBA
2-3F1A
Weight: 0.012g
Unit: mm


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