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KNU4820B Datasheet(PDF) 3 Page - KIA Semiconductor Technology

Part No. KNU4820B
Description  9.0A,200V N-CHANNEL MOSFET
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Maker  KIA [KIA Semiconductor Technology]
Homepage  http://en.kiaic.com/
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KNU4820B Datasheet(HTML) 3 Page - KIA Semiconductor Technology

   
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9.0A,200V
N-CHANNEL MOSFET
`
KIA
SEMICONDUCTORS
KNX4820B
KIA
SEMICONDUCTORS
KIA
SEMICONDUCTORS
7. Electrical characteristics
(TJ=25°C,unless otherwise notes)
Parameter
Symbol
Conditions
Min
Typ
Max
Units
Off characteristics
Drain-source breakdown voltage
BVDSS
VGS=0V,ID=250
μA
200
-
-
V
Drain-to-source Leakage Current
IDSS
VDS=200V ,VGS=0V
-
-
1
μA
VDS=160VGS=0V
TC=125
ºC,
-
-
10
μA
Gate-body leakage current
IGSS
VGS=20V,VDS=0V
-
-
+100
nA
VGS=-20V,VDS=0V
-
-
-100
nA
On characteristics
Static drain-source on-resistance
RDS(on)
VGS=10V,ID=4.5A
-
250
300
m
Ω
VGS=4.5V,ID=4.5A
-
270
320
m
Ω
Gate threshold voltage
VGS(th)
VDS=VGS,ID=250
μA
1.0
-
3.0
V
Forward Transconductance
gfs
VDS=20V,ID=9A
-
9.0
-
S
Dynamic characteristics
Input capacitance
Ciss
VDS=25V,VGS=0V,
f=1MHz
-
418
-
pF
Output capacitance
Coss
-
94
-
pF
Reverse transfer capacitance
Crss
-
55
-
pF
Total gate charge
Turn-on delay time
td(on)
VDD=100V,ID=9.0A,
VGS=10V,RG=12
Ω
-
7.0
-
ns
Rise time
tr
-
6.0
-
ns
Turn-off delay time
td(off)
-
20
-
ns
Fall time
tf
-
6.0
-
ns
Total gate charge
Qg
VDD=100V,ID=9.0A,
VGS=0 to10V
-
28
-
nC
Gate-source charge
Qgs
-
12
-
nC
Gate-drain charge
Qgd
-
2.0
-
nC
Drain-source diode characteristics
Drain-source diode forward voltage
VSD
VGS=0V,Is=9.0A
-
-
1.5
V
Continuous drain-source current [2]
ISD
Integral pn-diode
In MOSFET
-
-
9
A
Pulsed drain-source current[2]
ISM
-
-
36
A
Reverse recovery time
trr
VGS=0V,IF=9.0A
dIF/dt=100A/μs
-
238
-
ns
Reverse recovery charge
Qrr
-
1.0
-
μC
Note: [1] TJ=+25
ºC to +150 ºC
[2] Pulse width
≤380μs; duty cycle≤2%.
3 of8
Rev 1.0 Jan. 2018


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