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STB11NB40-1 Datasheet(PDF) 3 Page - STMicroelectronics |
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STB11NB40-1 Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 11 page 3/11 STB11NB40/STB11NB40-1 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise specified) Table 6. Off Table 7. On (1) Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Table 8. Dynamic Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Table 9. Switching On Table 10. Switching Off Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID = 250 µA; VGS = 0 400 V IDSS Zero Gate Voltage VDS = Max Rating 1 µA Drain Current (VGS = 0) VDS = Max Rating Tc = 125 °C 50 µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 30 V ± 100 nA Symbol Parameter Test Conditions Min. Typ. Max. Unit VGS(th) Gate Threshold Voltage VDS = VGS; ID = 250 µA3 4 5 V RDS(on) Static Drain-source On Resistance VGS = 10V; ID = 5.3 A 0.48 0.55 Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (1) Forward Transconductance VDS > ID(on) x RDS(on)max; ID = 5.3 A 5 6.5 S Ciss Input Capacitance VDS = 25 V; f = 1 MHz; VGS = 0 1115 1450 pF Coss Output Capacitance 210 280 pF Crss Reverse Transfer Capacitance 22 30 pF Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) Turn-on Time VDD = 200 V; ID = 5.3 A; RG = 4.7 Ω 17 25 ns tr Rise Time VGS = 10 V (see test circuit, Figure 16) 10 15 ns Qg Total Gate Charge VDD = 320 V; ID = 10.7 A; VGS = 10 V 29.5 43 nC Qgs Gate-Source Charge 10.6 nC Qgd Gate-Drain Charge 11.8 nC Symbol Parameter Test Conditions Min. Typ. Max. Unit tr(Voff) Off-voltage Rise Time VDD = 320 V; ID = 10.7 A; RG = 4.7 Ω 10 14 ns tf Fall Time VGS = 10 V; (see test circuit, Figure 18) 10 14 ns tc Cross-over Time 17 25 ns |
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