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8205A Datasheet(PDF) 1 Page - KIA Semiconductor Technology

Part # 8205A
Description  5A 20V N-Channel Enhancement-Mode MOSFET
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Manufacturer  KIA [KIA Semiconductor Technology]
Direct Link  http://en.kiaic.com/
Logo KIA - KIA Semiconductor Technology

8205A Datasheet(HTML) 1 Page - KIA Semiconductor Technology

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5A 20V N-Channel
Enhancement-Mode MOSFET
KIA
SEMICONDUCTORS
8205A
1. Features
n
RDS(ON), Vgs@1.8V, Ids@2.0A = 75m
Ω
n
RDS(ON), Vgs@2.5V, Ids@3.5A = 38m
Ω
n
RDS(ON), Vgs@4.0V, Ids@4.5A = 30m
Ω
n
RDS(ON), Vgs@4.5V, Ids@4.5A = 28m
Ω
n
RDS(ON), Vgs@10V, Ids@5.0A = 25m
Ω
n
Advanced trench process technology
n
High Density Cell Design For Ultra Low On-Resistance
n
High Power and Current handing capability
n
Ideal for Li ion battery pack applications
2. Pin information
3. Maximum Ratings and Thermal Characteristics
(TA = 25℃ unless otherwise noted)
Parameter
Symbol
Limit
Umit
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
±12
Continuous Drain Current1
ID
5
A
Pulsed Drain Current2
IDM
20
Maximum Power Dissipation
TA = 25℃
PD
2
W
TA = 75℃
1.28
Operating Junction and Storage Temperature Range
Tj1
Tstg
-55 to 150
Junction-to-Ambient Thermal Resistance (PCB mounted)3
ROUA
62.5
℃/W
Note:
1. Fused current that based on wire numbers and diameter
2. Repetitive Rating: Pulse width limited by the maximum junction temperature
3. 1-in2
2oz Cu PCB board
1 of5
Rev 1.1 Dec 2015
D ra in1
G at e1
S ou rc e1
D ra in2
G at e2
S ou rce2
I nt er n al
S ch e ma tic D iag ram


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