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ZV831 Datasheet(PDF) 2 Page - Zetex Semiconductors

Part No. ZV831
Description  SILICON 25V HYPERABRUPT VARACTOR DIODES
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Maker  ZETEX [Zetex Semiconductors]
Homepage  http://www.diodes.com/
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ZV831 Datasheet(HTML) 2 Page - Zetex Semiconductors

   
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830 SERIES
SEMICO NDUC TORS
ISSUE 8 - MARCH 2005
2
PART
Capacitance (pF)
VR=2V, f=1MHz
Min Q
VR=3V
f=50MHz
Capacitance Ratio
C2 /C20
at f=1MHz
MIN.
NOM.
MAX.
MIN.
MAX.
829A
7.38
8.2
9.02
250
4.3
5.8
829B
7.79
8.2
8.61
250
4.3
5.8
830A
9.0
10.0
11.0
300
4.5
6.0
830B
9.5
10.0
10.5
300
4.5
6.0
831A
13.5
15.0
16.5
300
4.5
6.0
831B
14.25
15.0
15.75
300
4.5
6.0
832A
19.8
22.0
24.2
200
5.0
6.5
832B
20.9
22.0
23.1
200
5.0
6.5
833A
29.7
33.0
36.3
200
5.0
6.5
833B
31.35
33.0
34.65
200
5.0
6.5
834A
42.3
47.0
51.7
200
5.0
6.5
834B
44.65
47.0
49.35
200
5.0
6.5
835A
61.2
68.0
74.8
100
5.0
6.5
835B
64.6
68.0
71.4
100
5.0
6.5
836A
90.0
100.0
110.0
100
5.0
6.5
TUNING CHARACTERISTICS at Tamb = 25
°C
PARAMETER
SYMBOL
MAX
UNIT
Forward current
IF
200
mA
Power dissipation at Tamb =25 C SOT23
Ptot
330
mW
Power dissipation at Tamb =25 C SOD323
Ptot
330
mW
Power dissipation at Tamb =25 C SOD523
Ptot
250
mW
Operating and storage temperature range
-55 to +150
C
ABSOLUTE MAXIMUM RATINGS
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Reverse breakdown voltage
IR = 10uA
25
V
Reverse voltage leakage
VR = 20V
0.2
20
nA
Temperature coefficient of capacitance
VR = 3V, f = 1MHz
300
400
ppCm/ C
ELECTRICAL CHARACTERISTICS at Tamb = 25
°C


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