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100N03A Datasheet(PDF) 3 Page - KIA Semiconductor Technology

Part No. 100N03A
Description  90A,30V N-CHANNEL MOSFET
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Maker  KIA [KIA Semiconductor Technology]
Homepage  http://en.kiaic.com/
Logo KIA - KIA Semiconductor Technology

100N03A Datasheet(HTML) 3 Page - KIA Semiconductor Technology

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90A,30V
N-CHANNEL MOSFET
KIA
SEMICONDUCTOR
S
100N03A
KIA
SEMICONDUCTOR
S
KIA
SEMICONDUCTORS
6. Electrical characteristics
(TA=25°C,unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Drain-source breakdown voltage
BVDSS
VGS=0V,IDS=250μA
30
-
-
V
BVDSS temperature coefficient
△BVDSS
/△TJ
Reference to 25°C,ID=1mA
-
0.03
-
V/°C
Zero gate voltage drain current
IDSS
VDS=30V,VGS=0V,TJ=25°C
-
-
1
μA
VDS=24V,VGS=0V,TJ=125°C
-
-
10
Gate threshold voltage
VGS(th)
VDS=VGS,ID=250
μA
1.2
1.6
2.5
V
VGS(th) temperature coefficient
△VGS(th)
VDS=VGS,ID=250μA
-
-5
-
mV/°C
Gate leakage current
IGSS
VGS=+20V,VDS=0V
-
-
+100
nA
Drain-source on-resistance(note3)
RDS(on)
VGS=10V,ID=24A
(To-251/252)
-
3.1
4
m
Ω
VGS=10V,ID=24A(To-220,263)
4.0
5.0
VGS=4.5V,ID=12A
-
4.5
6
Forward transconductance
gfs
VDS=10V,ID=10A
-
15.5
-
S
Gate resistance
Rg
VDS=0V,VGS=0V,f=1MHz
-
2
4
Ω
Input capacitance
Ciss
VDS=25V,VGS=0V,
f=1MHz
-
2200
3190
pF
Output capacitance
Coss
-
280
410
Reverse transfer capacitance
Crss
-
177
260
Turn-on delay time(note 3,4)
td(on)
VDD=15V,ID=15A,
RG=3.3
Ω,VGS=10V
-
12.6
24
nS
Rise time(note 3,4)
tr
-
19.5
37
Turn-off delay time(note 3,4)
td(off)
-
42.8
81
Fall time(note 3,4)
tf
-
13.2
25
Total gate charge(note 3,4)
Qg
VDS=15V,VGS=4.5V
IDS=24A
-
24
34
nC
Gate-source charge(note 3,4)
Qgs
-
4.2
6
Gate-drain charge(note 3,4)
Qgd
-
13
18
Single pulse avalanche energy
EAS
VDD=25V,L=0.1mH,IAS=24A
31
-
-
mJ
Continuous source current
IS
VGS=VDS=0V,force current
-
-
90
A
Pulsed source current (note 3)
ISM
-
-
360
A
Diode forward voltage(note 3)
VSD
VGS=0V,IS=1A,TJ=25°C
-
-
1
V
Reverse recovery time
trr
VDS=30V,IS=1A,
di/dt=100A/
μs
-
-
-
nS
Reverse recovery charge
Qrr
-
-
-
nC
Note:1: Repetitive rating, pulse width limited by max junction temperature.
2:VDD=25V,VGS=10V, L=0.1mH,IAS=50A,RG=25Ω, startingTJ=25°C
3: The data tested by pulsed, pulse width≦300us, duty cycle ≦2%
4: Essentially independent of operating temperature.
3 of5
Rev 1.2 Oct. 2016


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