SUD70N02-03P datasheet(1/4 Pages) VISHAY

Part #	SUD70N02-03P

Description	N-Channel 20-V (D-S) 175 Degrees Celcious MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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FEATURES

D TrenchFETr Power MOSFET

D 175_C Junction Temperature

D PWM Optimized for High-Efficiency

D 100% Rg Tested

APPLICATIONS

D Synchronous Buck Converter

- Low-Side

- Secondary Synchronous Rectifier

SUD70N02-03P

Vishay Siliconix

New Product

Document Number: 72246

S-31984—Rev. B, 13-Oct-03

www.vishay.com

1

N-Channel 20-V (D-S) 175_C MOSFET

PRODUCT SUMMARY

VDS (V)

rDS(on) (W)

ID (A)a

20

0.0033 @ VGS = 10 V

39

20

0.0053 @ VGS = 4.5 V

31

D

G

S

N-Channel MOSFET

TO-252

S

GD

Top View

Drain Connected to Tab

Ordering Information: SUD70N02-03P

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

20

V

Gate-Source Voltage

VGS

"20

V

Continuous Drain Currenta

TA = 25_C

ID

39a

Continuous Drain Currenta

TC= 25_C

ID

70b

A

Pulsed Drain Current

IDM

100

A

Continuous Source Current (Diode Conduction)a

IS

37

Maximum Power Dissipation

TA = 25_C

PD

8.3a

W

Maximum Power Dissipation

TC = 25_C

PD

100

W

Operating Junction and Storage Temperature Range

TJ, Tstg

-55 to 175

_C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction to Ambienta

t v 10 sec

R

15

18

Maximum Junction-to-Ambienta

Steady State

RthJA

40

50

_C/W

Maximum Junction-to-Case

RthJC

1.2

1.5

C/W

Notes

a.

Surface Mounted on FR4 Board, t v 10 sec.

b.

Limited by package

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