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SUD50N06-16 Datasheet(PDF) 2 Page - Vishay Siliconix

Part No. SUD50N06-16
Description  N-Channel 60-V (D-S) 175 Degreee Celcious MOSFET
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
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SUD50N06-16 Datasheet(HTML) 2 Page - Vishay Siliconix

   
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SUD50N06-16
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 72396
S-31921—Rev. A, 15-Sep-03
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typa
Max
Unit
Static
Drain-Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
60
V
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 mA
2.0
4.0
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "20 V
"100
nA
VDS = 60 V, VGS = 0 V
1
Zero Gate Voltage Drain Current
IDSS
VDS = 60 V, VGS = 0 V, TJ = 125_C
50
mA
g
DSS
VDS = 60 V, VGS = 0 V, TJ = 175_C
250
m
On-State Drain Currentb
ID(on)
VDS = 5 V, VGS = 10 V
50
A
VGS = 10 V, ID = 20 A
0.0128
0.016
Drain-Source On-State Resistanceb
rDS(on)
VGS = 10 V, ID = 20 A, TJ = 125_C
0.027
W
DS(on)
VGS = 10 V, ID = 20 A, TJ = 175_C
0.032
Forward Transconductanceb
gfs
VDS = 15 V, ID = 20 A
20
S
Dynamica
Input Capacitance
Ciss
2100
Output Capacitance
Coss
VGS = 0 V, VDS = 25 V, F = 1 MHz
300
pF
Reverse Transfer Capacitance
Crss
125
Gate Resistance
Rg
f = 1 MHz
1.7
W
Total Gate Chargec
Qg
30
45
Gate-Source Chargec
Qgs
VDS = 30 V, VGS = 10 V, ID = 50 A
11
nC
Gate-Drain Chargec
Qgd
DS
, GS
, D
8
Turn-On Delay Timec
td(on)
10
15
Rise Timec
tr
VDD = 30 V, RL = 0.6 W
12
20
ns
Turn-Off Delay Timec
td(off)
VDD = 30 V, RL = 0.6 W
ID ^ 50 A, VGEN = 10 V, RG = 2.5 W
20
30
ns
Fall Timec
tf
10
15
Source-Drain Diode Ratings and Characteristic (TC = 25_C)
Pulsed Current
ISM
100
A
Diode Forward Voltageb
VSD
IF = 30 A, VGS = 0 V
1.0
1.5
V
Source-Drain Reverse Recovery Time
trr
IF = 50 A, di/dt = 100 A/ms
50
85
ns
Notes
a.
Guaranteed by design, not subject to production testing.
b.
Pulse test; pulse width v 300 ms, duty cycle v 2%.
c.
Independent of operating temperature.


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