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P25Q40H Datasheet(PDF) 10 Page - Puya Semiconductor Co., Ltd.

Part # P25Q40H
Description  Ultra Low Power, 4M/2M/1M/512K-bit Serial Multi I/O Flash Memory
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Manufacturer  PUYA [Puya Semiconductor Co., Ltd.]
Direct Link  http://www.puyasemi.com/index_en.html
Logo PUYA - Puya Semiconductor Co., Ltd.

P25Q40H Datasheet(HTML) 10 Page - Puya Semiconductor Co., Ltd.

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P25Q40H/20H/10H/05H Datasheet
Puya Semiconductor
Page 10 of 76
5.3
AC Characteristics
Table 5-3 AC parameters
Symbol
Alt.
Parameter
2.3V~3.6V
min
typ
max
Unit
fSCLK
fC
Clock Frequency for the following instructions: FAST_READ,
RDSFDP, PP, SE, BE32K, BE, CE, DP, RES, WREN, WRDI, RDID, RDSR,
WRSR(7)
104
MHz
fRSCLK
fR
Clock Frequency for READ instructions
55
MHz
fTSCLK
fT
Clock Frequency for DREAD instructions
104
MHz
Clock Frequency for 2READ instructions
85
MHz
fQ
Clock Frequency for QREAD instructions
104
MHz
Clock Frequency for 4READ instructions
85
MHz
fQPP
Clock Frequency for QPP (Quad page program)
104
MHz
tCH(1)
tCLH
Clock High Time
4.5
ns
tCL(1)
tCLL
Clock Low Time (fSCLK) 45% x (1fSCLK)
4.5
ns
tCLCH(7)
Clock Rise Time (peak to peak)
0.1
v/ns
tCHCL(7)
Clock Fall Time (peak to peak)
0.1
v/ns
tSLCH
tCSS
CS# Active Setup Time (relative to SCLK)
5
ns
tCHSL
CS# Not Active Hold Time (relative to SCLK)
5
ns
tDVCH
tDS
U
Data In Setup Time
2
ns
tCHDX
tDH
Data In Hold Time
3
ns
tCHSH
CS# Active Hold Time (relative to SCLK)
5
ns
tSHCH
CS# Not Active Setup Time (relative to SCLK)
5
ns
tSHSL
tCSH
CS# Deselect Time From Read to next Read
15
ns
CS# Deselect Time From Write,Erase,Program to Read Status
Register
30
ns
tSHQZ(7)
tDIS
Output Disable Time
6
ns
tCLQV
tV
Clock Low to Output Valid Loading 30pF
7
ns
Clock Low to Output Valid Loading 15pF
6
ns
tCLQX
tHO
Output Hold Time
0
ns
tHLCH
HOLD# Active Setup Time (relative to SCLK)
5
ns
tCHHH
HOLD# Active Hold Time (relative to SCLK)
5
ns
tHHCH
HOLD# Not Active Setup Time (relative to SCLK)
5
ns
tCHHL
HOLD# Not Active Hold Time (relative to SCLK)
5
ns
tHHQX
tLZ
HOLD# to Output Low-Z
6
ns
tHLQZ
tHZ
HOLD# to Output High-Z
6
ns
tWHSL(3)
Write Protect Setup Time
20
ns
tSHWL(3)
Write Protect Hold Time
100
ns
tDP
CS# High to Deep Power-down Mode
3
us
tRES1
CS# High To Standby Mode Without Electronic Signature Read
8
us
tRES2
CS# High To Standby Mode With Electronic Signature Read
8
us
tW
Write Status Register Cycle Time
8
12
ms
tReady
Reset recovery time(for erase/program operation except WRSR)
30
us
Reset recovery time(for WRSR operation)
8
12
ms


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