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K9F1G08U0B-P Datasheet(PDF) 26 Page - Samsung semiconductor |
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K9F1G08U0B-P Datasheet(HTML) 26 Page - Samsung semiconductor |
26 / 36 page FLASH MEMORY 26 K9F1G08U0B Read ID Operation CE CLE WE ALE RE 90h Read ID Command Maker Code Device Code 00h ECh tREA Address 1cycle I/Ox tAR Device Device Code (2nd Cycle) 3rd Cycle 4th Cycle 5th Cycle K9F1G08U0B F1h 00h 95h 40h Device 4th cyc. Code 3rd cyc. 5th cyc. |
Similar Part No. - K9F1G08U0B-P |
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Similar Description - K9F1G08U0B-P |
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