K9F1G08U0B-P datasheet(14/36 Pages) SAMSUNG

Part #	K9F1G08U0B-P

Description	128M x 8 Bit NAND Flash Memory

Download	36 Pages

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Manufacturer	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

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14 / 36 page

FLASH MEMORY

14

K9F1G08U0B

Erase Flow Chart

Start

I/O 6 = 1 ?

I/O 0 = 0 ?

No

*

Write 60h

Write Block Address

Write D0h

Read Status Register

or R/B = 1 ?

Erase Error

Yes

No

: If erase operation results in an error, map out

the failing block and replace it with another block.

*

Erase Completed

Yes

Read Flow Chart

Start

Verify ECC

No

Write 00h

Write Address

Read Data

ECC Generation

Reclaim the Error

Page Read Completed

Yes

NAND Flash Technical Notes (Continued)

Write 30h

Block Replacement

* Step1

When an error happens in the nth page of the Block ’A’ during erase or program operation.

* Step2

Copy the data in the 1st ~ (n-1)th page to the same location of another free block. (Block ’B’)

* Step3

Then, copy the nth page data of the Block ’A’ in the buffer memory to the nth page of the Block ’B’.

* Step4

Do not erase or program to Block ’A’ by creating an ’invalid block’ table or other appropriate scheme.

Buffer memory of the controller.

1st

Block A

Block B

(n-1)th

nth

(page)

{

1st

(n-1)th

nth

(page)

{

an error occurs.

1

2

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K9F1G08U0B-P Datasheet(PDF) 14 Page - Samsung semiconductor

K9F1G08U0B-P Datasheet(HTML) 14 Page - Samsung semiconductor

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