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K9F1G08U0B-P Datasheet(PDF) 14 Page - Samsung semiconductor |
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K9F1G08U0B-P Datasheet(HTML) 14 Page - Samsung semiconductor |
14 / 36 page FLASH MEMORY 14 K9F1G08U0B Erase Flow Chart Start I/O 6 = 1 ? I/O 0 = 0 ? No * Write 60h Write Block Address Write D0h Read Status Register or R/B = 1 ? Erase Error Yes No : If erase operation results in an error, map out the failing block and replace it with another block. * Erase Completed Yes Read Flow Chart Start Verify ECC No Write 00h Write Address Read Data ECC Generation Reclaim the Error Page Read Completed Yes NAND Flash Technical Notes (Continued) Write 30h Block Replacement * Step1 When an error happens in the nth page of the Block ’A’ during erase or program operation. * Step2 Copy the data in the 1st ~ (n-1)th page to the same location of another free block. (Block ’B’) * Step3 Then, copy the nth page data of the Block ’A’ in the buffer memory to the nth page of the Block ’B’. * Step4 Do not erase or program to Block ’A’ by creating an ’invalid block’ table or other appropriate scheme. Buffer memory of the controller. 1st Block A Block B (n-1)th nth (page) { 1st (n-1)th nth (page) { an error occurs. 1 2 |
Similar Part No. - K9F1G08U0B-P |
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Similar Description - K9F1G08U0B-P |
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