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2N6277 Datasheet(PDF) 2 Page - ON Semiconductor

Part No. 2N6277
Description  POWER TRANSISTORS NPN SILICON
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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2N6277 Datasheet(HTML) 2 Page - ON Semiconductor

   
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2N6274 2N6275 2N6277
2
Motorola Bipolar Power Transistor Device Data
*ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
IC = 50 mAdc, IB = 0)
2N6274
2N6275
2N6277
VCEO(sus)
100
120
150
Vdc
Collector Cutoff Current
(VCE = 50 Vdc, IB = 0)
2N6274
(VCE = 60 Vdc, IB = 0)
2N6275
(VCE = 75 Vdc, IB = 0)
2N6277
ICEO
50
50
50
µAdc
Collector Cutoff Current
(VCE = Rated VCB, VEB(off) = 1.5 Vdc)
(VCE = Rated VCB, VEB(off) = 1.5 Vdc, TC = 150_C)
ICEX
10
1.0
µAdc
mAdc
Emitter Cutoff Current (VBE = 6.0 Vdc, IC = 0)
IEBO
100
µAdc
ON CHARACTERISTICS (1)
DC Current Gain
IC = 1.0 Adc, VCE = 4.0 Vdc)
IC = 20 Adc, VCE = 4.0 Vdc)
IC = 50 Adc, VCE = 4.0 Vdc)
hFE
50
30
10
120
Coliector–Emitter Saturation Voltage
IC = 20 Adc, IB = 2.0 Adc)
IC = 50 Adc, IB = 10 Adc)
VCE (sat)
1.0
3.0
Vdc
Base–Emitter Saturation Voltage
IC = 20 Adc, IB = 2.0 Adc)
IC = 50 Adc, IB = 10 Adc)
VBE(sat)
1.8
3.5
Vdc
Base–Emitter On Voltage (IC = 20 Adc, VCE = 4.0 Vdc)
VBE(on)
1.8
Vdc
DYNAMIC CHARACTERISTICS
Current–Gain Bandwidth Product (2)
(IC = 1.0 Adc, VCE = 10 Vdc, ftest = 10 MHz)
fT
30
MHz
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
Cob
600
pF
SWITCHING CHARACTERISTICS
Rise Time
(VCC = 80 Vdc, IC = 20 Adc, IB1 = 2.0 Adc, VBE(off) = 5.0 Vdc)
tr
0.35
µs
Storage Time
(VCC = 80 Vdc, IC = 20 Adc, IB1 = IB2 = 2.0 Adc)
ts
0.80
µs
Fall Time
(VCC = 80 Vdc, IC = 20 Adc, IB1 = IB2 = 2.0 Adc)
tf
0.25
µs
* Indicates JEDEC Registered Data.
(1) Pulse Test: Pulse Width
v 300 µs, Duty Cycle v 2.0%.
(2) fT = |hfe| • ftest
VCC
+ 80 V
RC
4.0 OHMS
RB
10 OHMS
tr, tf ≤ 10 ns
DUTY CYCLE = 0.5%
30
µs
+ 21.5 V
0
– 18.5 V
1N3879
– 4.0 V
Figure 2. Switching Time Test Circuit
0.5
Figure 3. Turn–On Time
IC, COLLECTOR CURRENT (AMP)
2.0
0.7
1.0
2.0
3.0
5.0 7.0 10
50
tr @ VCC = 80 V
td @ VBE(off) = 5.0 V
IC/IB = 10
TJ = 25°C
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
20
30
NOTE: For information of Figures 3 and 6 , RB and RC were
NOTE: varied to obtain desired test conditions.


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