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2N6282 Datasheet(PDF) 2 Page - ON Semiconductor

Part No. 2N6282
Description  DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

2N6282 Datasheet(HTML) 2 Page - ON Semiconductor

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2N6282 thru 2N6284 2N6285 thru 2N6287
2
Motorola Bipolar Power Transistor Device Data
*ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(IC = 0.1 Adc, IB = 0)
2N6282, 2N6285
2N6283, 2N6286
2N6284, 2N6287
VCEO(sus)
60
80
100
Vdc
Collector Cutoff Current
(VCE = 30 Vdc, IB = 0)
2N6282, 2N6285
(VCE = 40 Vdc, IB = 0)
2N6283, 2N6286
(VCE = 50 Vdc, IB = 0)
2N6284, 2N6287
ICEO
1.0
1.0
1.0
mAdc
Collector Cutoff Current
(VCE = Rated VCB, VBE(off) = 1.5 Vdc)
(VCE = Rated VCB, VBE(off) = 1.5 Vdc, TC = 150_C)
ICEX
0.5
5.0
mAdc
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
2.0
mAdc
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 10 Adc, VCE = 3.0 Vdc)
(IC = 20 Adc, VCE = 3.0 Vdc)
hFE
750
100
18,000
Collector–Emitter Saturation Voltage
(IC = 10 Adc, IB = 40 mAdc)
(IC = 20 Adc, IB = 200 mAdc)
VCE(sat)
2.0
3.0
Vdc
Base–Emitter On Voltage
(IC = 10 Adc, VCE = 3.0 Vdc)
VBE(on)
2.8
Vdc
Base–Emitter Saturation Voltage
(IC = 20 Adc, IB = 200 mAdc)
VBE(sat)
4.0
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small–Signal Short–Circuit
Forward Current Transfer Ratio
(IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)
|hfe|
4.0
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
2N6282,83,84
2N6285,86,87
Cob
400
600
pF
Small–Signal Current Gain
(IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 kHz)
hfe
300
* Indicates JEDEC Registered Data.
(1) Pulse test: Pulse Width = 300
µs, Duty Cycle = 2%
Figure 2. Switching Times Test Circuit
10
0.2
Figure 3. Switching Times
IC, COLLECTOR CURRENT (AMP)
7.0
2.0
1.0
0.7
0.5
0.1
0.3
0.7
3.0
20
0.2
1.0
5.0
0.3
3.0
5.0
0.5
2.0
7.0
0
VCC
– 30 V
SCOPE
TUT
+ 4.0 V
tr, tf v 10 ns
DUTY CYCLE = 1.0%
RC
D1 MUST BE FAST RECOVERY TYPE e.g.,
1N5825 USED ABOVE IB [ 100 mA
MSD6100 USED BELOW IB [ 100 mA
25
µs
D1
51
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
V2
APPROX
+ 8.0 V
V1
APPROX
– 12 V
[ 8.0 k
[ 50
FOR td AND tr, D1 IS DISCONNECTED
AND V2 = 0
FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES
RB
10
td @ VBE(off) = 0 V
tf
ts
tr
2N6282/84 (NPN)
2N6285/87 (PNP)
VCC = 30 Vdc
IC/IB = 250
IB1 = IB2
TJ = 25°C


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