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2N6282 Datasheet(PDF) 1 Page - ON Semiconductor

Part No. 2N6282
Description  DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
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2N6282 Datasheet(HTML) 1 Page - ON Semiconductor

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Motorola Bipolar Power Transistor Device Data
Darlington Complementary
Silicon Power Transistors
. . . designed for general–purpose amplifier and low–frequency switching applica-
tions.
• High DC Current Gain @ IC = 10 Adc —
hFE = 2400 (Typ) — 2N6282, 2N6283, 2N6284
hFE = 4000 (Typ) — 2N6285, 2N6286, 2N6287
• Collector–Emitter Sustaining Voltage —
VCEO(sus) = 60 Vdc (Min) — 2N6282, 2N6285
VCEO(sus) = 80 Vdc (Min) — 2N6283, 2N6286
VCEO(sus) = 100 Vdc (Min) — 2N6284, 2N6287
• Monolithic Construction with Built–In Base–Emitter Shunt Resistors
*MAXIMUM RATINGS
Rating
Symbol
2N6282
2N6285
2N6283
2N6286
2N6284
2N6287
Unit
Collector–Emitter Voltage
VCEO
60
80
100
Vdc
Collector–Base Voltage
VCB
60
80
100
Vdc
Emitter–Base Voltage
VEB
5.0
Vdc
Collector Current — Continuous
Peak
IC
20
40
Adc
Base Current
IB
0.5
Adc
Total Device Dissipation @ TC = 25_C
Derate above 25
_C
PD
160
0.915
Watts
W/
_C
Operating and Storage Junction
Temperature Range
TJ,Tstg
– 65 to + 200
_C
*THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θJC
1.09
_C/W
* Indicates JEDEC Registered Data.
25
50
100
125
200
Figure 1. Power Derating
TC, CASE TEMPERATURE (°C)
160
60
40
140
0
75
150
0
20
80
100
120
175
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N6282/D
© Motorola, Inc. 1995
DARLINGTON
20 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
60, 80, 100 VOLTS
160 WATTS
2N6282
thru
2N6284
2N6285
thru
2N6287
*Motorola Preferred Device
*
*
CASE 1–07
TO–204AA
(TO–3)
NPN
PNP


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