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2N6274 Datasheet(PDF) 1 Page - ON Semiconductor

Part No. 2N6274
Description  POWER TRANSISTORS NPN SILICON
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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2N6274 Datasheet(HTML) 1 Page - ON Semiconductor

   
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Motorola Bipolar Power Transistor Device Data
High-Power NPN Silicon
Transistors
. . . designed for use in industrial–military power amplifer and switching circuit
applications.
• High Collector Emitter Sustaining —
VCEO(sus) = 100 Vdc (Min) — 2N6274
VCEO(sus) = 120 Vdc (Min) — 2N6275
VCEO(sus) = 150 Vdc (Min) — 2N6277
• High DC Current Gain —
hFE = 30–120 @ IC = 20 Adc
hFE = 10 (Min) @ IC = 50 Adc
• Low Collector–Emitter Saturation Voltage —
VCE(sat) = 1.0 Vdc (Max) @ IC = 20 Adc
• Fast Switching Times @ IC 20 Adc
tr = 0.35 µs (Max)
ts = 0.8 µs (Max)
tf = 0.25 µs (Max)
• Complement to 2N6377–79
MAXIMUM RATINGS(1)
Rating
Symbol
2N6274
2N6275
2N6277
Unit
Collector–Base Voltage
VCB
120
140
180
Vdc
Collector–Emitter Voltage
VCEO
100
120
150
Vdc
Emitter–Base Voltage
VEB
6.0
Vdc
Collector Current — Continuous
Peak
IC
50
100
Adc
Base Current
IB
20
Adc
Total Device Dissipation @ TC = 25_C
Derate above 25
_C
PD
250
1.43
Watts
W/
_C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 65 to + 200
_C
THERMAL CHARACTERISTIC
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
θJC
0.7
_C/W
(1) Indicates JEDEC Registered Data.
0
25
75
200
Figure 1. Power Derating
200
250
150
100
50
0
TC, CASE TEMPERATURE (°C)
100
50
125
150
175
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N6274/D
© Motorola, Inc. 1995
2N6274
2N6275
2N6277
*Motorola Preferred Device
50 AMPERE
POWER TRANSISTORS
NPN SILICON
100, 120, 140, 150 VOLTS
250 WATTS
*
CASE 197A–05
TO–204AE
(TO–3)
REV 7


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