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IL255 Datasheet(PDF) 2 Page - Vishay Siliconix

Part No. IL255
Description  Optocoupler, Phototransistor Output, AC Inout, With Base Connection
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

IL255 Datasheet(HTML) 2 Page - Vishay Siliconix

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Document Number 83619
Rev. 1.6, 26-Oct-04
IL255
Vishay Semiconductors
Output
Coupler
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Output
Parameter
Test condition
Symbol
Value
Unit
Collector-emitter breakdown
voltage
BVCEO
30
V
Emitter-base breakdown
voltage
BVEBO
5.0
V
Collector-base breakdown
voltage
BVCBO
70
V
Power dissipation
Pdiss
200
mW
Derate linearly from 25°C
2.6
mW/°C
Parameter
Test condition
Symbol
Value
Unit
Isolation test voltage ( between
emitter and detector, refer to
standard climate
23 °C/50 %RH, DIN 50014)
VISO
5300
VRMS
Creepage
≥ 7.0
mm
Clearance
≥ 7.0
mm
Isolation resistance
VIO = 500 V, Tamb = 25 °C
RIO
≥ 1012
VIO = 500 V, Tamb = 100 °C
RIO
≥ 1011
Total dissipation
Ptot
250
mW
Derate linearly from 25 °C
3.3
mW/°C
Storage temperature
Tstg
- 55 to + 150
°C
Operating temperature
Tamb
- 55 to + 100
°C
Lead soldering time at
≤ 260 °C
10
sec.
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Forward voltage
IF = ± 100 mA
VF
1.4
1.7
V
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Collector-emitter breakdown voltage
IC = 10 mA
BVCEO
30
50
V
Emitter-collector breakdown voltage
IE = 10 µABVECO
7.0
10
V
Collector-base breakdown voltage
IC = 100 µABVCBO
70
V
Emitter-base breakdown voltage
IE = 100 µABVEBO
7.0
V
Collector-emitter leakage current
VCE = 10 V
ICEO
5.0
50
nA


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