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S300D Datasheet(PDF) 1 Page - GeneSiC Semiconductor, Inc. |
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S300D Datasheet(HTML) 1 Page - GeneSiC Semiconductor, Inc. |
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VRRM = 1600 V - 2000 V IF =300 A Features • High Surge Capability DO-9 Package • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 3. Stud is base. Parameter Symbol Unit Repetitive peak reverse voltage VRRM V RMS reverse voltage VRMS V DC blocking voltage VDC V Continuous forward current IF A Operating temperature Tj °C Storage temperature Tstg °C Parameter Symbol Unit Diode forward voltage μA mA Thermal characteristics Thermal resistance, junction - case RthJC °C/W 2. Reverse polarity (R): Stud is anode. 0.16 12 10 IR VF VR = 1600 V, Tj = 175 °C V A -55 to 150 6850 300 S300Y (R) 1600 1131 1600 300 6850 -55 to 150 S300Y thru S300ZR VR = 1600 V, Tj = 25 °C IF = 300 A, Tj = 25 °C TC ≤ 130 °C Conditions Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Electrical characteristics, at Tj = 25 °C, unless otherwise specified Silicon Standard Recovery Diode Conditions TC = 25 °C, tp = 8.3 ms Surge non-repetitive forward current, Half Sine Wave IF,SM • Types from 1600 V to 2000 V V RRM 0.16 2000 1414 2000 1.2 S300Z (R) -55 to 150 -55 to 150 S300Z (R) S300Y (R) 1.2 10 12 Reverse current C A A C Stud Stud (R) C A A C Stud Stud (R) DO-9 (DO--205AB) 9(DO205AB) G A E D H I F B C 1 Oct. 2018 http://www.diodemodule.com/silicon_products/studs/s300y.pdf |
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