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2N6052 Datasheet(PDF) 5 Page - ON Semiconductor

Part No. 2N6052
Description  DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
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Homepage  http://www.onsemi.com
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2N6052 Datasheet(HTML) 5 Page - ON Semiconductor

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2N6052
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5
20,000
0.2
Figure 9. DC Current Gain
IC, COLLECTOR CURRENT (AMP)
200
0.3
0.5
1.0
2.0
20
10
PNP
2N6052
NPN
2N6058, 2N6059
Figure 10. Collector Saturation Region
3.0
0.5
IB, BASE CURRENT (mA)
1.0
1.0
2.0
10
50
1.8
IC = 3.0 A
TJ = 25°C
6.0 A
2.2
2.6
5.0
3.0
0.2
IC, COLLECTOR CURRENT (AMP)
0.3
0.5
1.0
3.0
20
2.5
2.0
1.5
1.0
0.5
TJ = 25°C
VBE(sat) @ IC/IB = 250
VCE(sat) @ IC/IB = 250
Figure 11. “On” Voltages
VBE @ VCE = 3.0 V
2.0
10,000
TJ = 150°C
25°C
-55°C
20
IC, COLLECTOR CURRENT (AMP)
VCE = 3.0 V
TJ = 150°C
25°C
-55°C
1.4
9.0 A
IB, BASE CURRENT (mA)
TJ = 25°C
IC, COLLECTOR CURRENT (AMP)
TJ = 25°C
VBE @ VCE = 3.0 V
5000
3000
2000
1000
500
300
3.0
5.0
VCE = 3.0 V
40,000
0.2
400
0.3
0.5
1.0
2.0
20
10
20,000
10,000
6,000
4,000
2,000
1,000
600
3.0
5.0
3.0
3.0
1.0
1.8
2.2
2.6
1.4
10
5.0
3.0
0.2 0.3
0.5
1.0
3.0
20
2.5
2.0
1.5
1.0
0.5
2.0
10
5.0
30
12 A
IC = 3.0 A
6.0 A
9.0 A
12 A
0.5
1.0
2.0
10
50
5.0
20
3.0
30
VBE(sat) @ IC/IB = 250
VCE(sat) @ IC/IB = 250


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